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26.
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27.
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9 p, 1.1 MB |
Quantum transport in graphene in presence of strain-induced pseudo-Landau levels
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Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ;
Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ;
Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ;
Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 -  10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005
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28.
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10 p, 908.2 KB |
Thermal conductivity of MoS2 polycrystalline nanomembranes
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Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ;
Graczykowski, Bartlomiej (Institut Català de Nanociència i Nanotecnologia) ;
Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ;
Saleta Reig, David (Institut Català de Nanociència i Nanotecnologia) ;
Sachat, Alexandros el (Universitat Autònoma de Barcelona. Departament de Física) ;
Reparaz, Juan Sebastian (Institut Català de Nanociència i Nanotecnologia) ;
Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ;
Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya)) ;
Quey, Romain (Centre national de la recherche scientifique. École nationale supérieure des mines de Saint-Étienne) ;
Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Heat conduction in 2D materials can be effectively engineered by means of controlling nanoscale grain structure. Afavorable thermal performance makes these structures excellent candidates for integrated heat management units. [...]
2016 - 10.1088/2053-1583/3/3/035016
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35016
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29.
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14 p, 1.6 MB |
Localized electronic states at grain boundaries on the surface of graphene and graphite
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Luican-Mayer, Adina (University of Ottawa. Department of Physics) ;
Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ;
Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ;
Autès, Gabriel (Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Soriano, David (Institut Català de Nanociència i Nanotecnologia) ;
Li, Guohong (Rutgers University. Department of Physics and Astronomy) ;
Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ;
Yazyev, Oleg V. (Institute of Physics. Ecole Polytechnique Fédérale de Lausanne (EPFL)) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Yandrei, Eva Y. (Rutgers University. Department of Physics and Astronomy)
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. [...]
2016 - 10.1088/2053-1583/3/3/031005
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 031005
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30.
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12 p, 6.0 MB |
How disorder affects topological surface states in the limit of ultrathin Bi2Se3 films
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Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ;
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ;
Soriano, David (Institut Català de Nanociència i Nanotecnologia) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a first-principles study of electronic properties of ultrathin films of topological insulators (TIs) and scrutinize the role of disorder on the robustness of topological surface states, which can be analysed through their spin textures. [...]
2016 - 10.1088/2053-1583/3/4/045007
2D Materials, Vol. 3, Núm. 4 (December 2016) , art. 045007
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31.
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13 p, 1.2 MB |
First principles analysis of the CDW instability of single-layer 1T-TiSe2 and its evolution with charge carrier density
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Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ;
Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ;
Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
We present a density functional theory study of the electronic structure of single-layer TiSe, and focus on the charge density wave (CDW) instability present on this 2D material. We explain the periodicity of the CDW from the phonon band structure of the undistorted crystal, which is unstable under one of the phonon modes at the M point. [...]
2018 - 10.1088/2053-1583/aab568
2D Materials, Vol. 5, Núm. 2 (March 2018) , art. 025024
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32.
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15 p, 1.0 MB |
1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures
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Karpiak, Bogdan (Chalmers University of Technology (Göteborg, Suècia)) ;
Dankert, André (Chalmers University of Technology (Göteborg, Suècia)) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Dash, Saroj P. (Chalmers University of Technology (Göteborg, Suècia))
We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. [...]
2018 - 10.1088/2053-1583/aa8d2b
2D Materials, Vol. 5, Núm. 1 (January 2018) , article 14001
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33.
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17 p, 3.3 MB |
Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene
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Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ;
Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ;
Soriano, David (Institut Català de Nanociència i Nanotecnologia) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. [...]
2017 - 10.1088/2053-1583/aa59de
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 25009
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34.
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35.
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14 p, 2.0 MB |
Scaling properties of polycrystalline graphene : A review
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Isacsson, Andreas (Chalmers University of Technology (Göteborg, Suècia)) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luigi (Texas Instruments, Inc. (Dallas, Estats Units d'Amèrica)) ;
Kinaret, Jari M. (Chalmers University of Technology (Göteborg, Suècia)) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. [...]
2017 - 10.1088/2053-1583/aa5147
2D Materials, Vol. 4, Núm. 1 (March 2017) , article 012002
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