Dipòsit Digital de Documents de la UAB 40 registres trobats  inicianterior12 - 21següentfinal  anar al registre: La cerca s'ha fet en 0.01 segons. 
12.
9 p, 1.8 MB Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene / Karpiak, Bogdan (Chalmers University of Technology) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Zollner, Klaus (University of Regensburg) ; Vila Tusell, Marc (Universitat Autònoma de Barcelona. Departament de Física) ; Khokhriakov, Dmitrii (Chalmers University of Technology) ; Hoque, Anamul Md (Chalmers University of Technology) ; Dankert, André (Chalmers University of Technology) ; Svedlindh, Peter (Uppsala University) ; Fabian, Jaroslav (University of Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Dash, Saroj P. (Chalmers University of Technology)
Engineering 2D material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator CrGeTe and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. [...]
2019 - 10.1088/2053-1583/ab5915
2D Materials, Vol. 7, Núm. 1 (December 2019) , art. 15026  
13.
17 p, 3.1 MB Symmetry forbidden morphologies and domain boundaries in nanoscale graphene islands / Parreiras, Sofia de Oliveira (Institut Català de Nanociència i Nanotecnologia) ; Gastaldo, Michele (Institut Català de Nanociència i Nanotecnologia) ; Moreno, Cesar (Institut Català de Nanociència i Nanotecnologia) ; Martins, M. D. (Centro de Desenvolvimento da Tecnologia Nuclear (CDTN)) ; Garcia-Lekue, Aran (Basque Foundation for Science) ; Ceballos, Gustavo (Institut Català de Nanociència i Nanotecnologia) ; Paniago, R. (Universidade Federal de Minas Gerais. Departamento de Física) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia)
The synthesis of graphene nanoislands with tailored quantum properties requires an atomic control of the morphology and crystal structure. As one reduces their size down to the nanometer scale, domain boundary and edge energetics, as well as nucleation and growth mechanisms impose different stability and kinetic landscape from that at the microscale. [...]
2017 - 10.1088/2053-1583/aa70fa
2D Materials, Vol. 4, Núm. 2 (May 2017) , art. 25104  
14.
43 p, 3.3 MB Sensing ion channel in neuron networks with graphene field effect transistors / Veliev, Farida (Université Grenoble Alpes) ; Cresti, Alessandro (Université Grenoble Alpes) ; Kalita, Dipankar (Université Grenoble Alpes) ; Bourrier, Antoine (Université Grenoble Alpes) ; Belloir, Tiphaine (Université Grenoble Alpes) ; Briançon-Marjollet, Anne (Université Grenoble Alpes) ; Albrieux, Mireille (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bouchiat, Vincent (Université Grenoble Alpes) ; Delacour, Cécile (Université Grenoble Alpes)
Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for chemical and biological sensing. Its biocompatible, flexible and chemically inert nature associated with the lack of dangling bonds, offers novel perspectives for direct interfacing with biological molecules. [...]
2018 - 10.1088/2053-1583/aad78f
2D Materials, Vol. 5, Núm. 4 (October 2018) , art. 45020  
15.
7 p, 1.6 MB Large-signal model of 2DFETs : compact modeling of terminal charges and intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Marin, Enrique G. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Toral-Lopez, Alejandro (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Ruiz, Francisco G. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Godoy Medina, Andres (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Park, Saungeun (The University of Texas. Department of Electrical and Computer Engineering (USA)) ; Akinwande, Deji (The University of Texas. Department of Electrical and Computer Engineering (USA)) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. [...]
2019 - 10.1038/s41699-019-0130-6
npj 2D Materials and Applications, Vol. 3 (December 2019) , art. 47  
16.
9 p, 1.4 MB Crossover from ballistic to diffusive thermal transport in suspended graphene membranes / Sachat, Alexandros el (Institut Català de Nanociència i Nanotecnologia) ; Köenemann, F. (IBM Research) ; Menges, F. (University of Colorado. Department of Physics) ; Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Gotsmann, B. (IBM Research)
We report heat transport measurements on suspended single-layer graphene disks with radius of 150-1600 nm using a high-vacuum scanning thermal microscope. The results of this study revealed a radius-dependent thermal contact resistance between tip and graphene, with values between 1. [...]
2019 - 10.1088/2053-1583/ab097d
2D Materials, Vol. 6, Núm. 2 (April 2019) , art. 25034  
17.
14 p, 2.2 MB Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS3 : electron doping and plasmons / Silva-Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (University of Manchester. Department of Physics and Astronomy) ; Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid)
Analysis of the band structure of TiS single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. [...]
2017 - 10.1088/2053-1583/aa6b92
2D Materials, Vol. 4, Núm. 2 (June 2017) , art. 25085  
18.
8 p, 3.1 MB 2 × 2 charge density wave in single-layer TiTe₂ / Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
A density functional theory study concerning the origin of the recently reported 2 × 2 charge density wave (CDW) instability in single-layer TiTe₂ is reported. It is shown that, whereas calculations employing the semi-local functional PBE favor the undistorted structure, the hybrid functional HSE06 correctly predicts a 2 × 2 distortion. [...]
2019 - 10.1088/2053-1583/aaf20b
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15027  
19.
15 p, 790.9 KB Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures / Vincent, Tom (National Physical Laboratory (United Kingdom)) ; Panchal, Vishal (Bruker Nano Surfaces) ; Booth, Timothy J. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Antonov, Vladimir (University of London. Royal Holloway) ; Kazakova, Olga (National Physical Laboratory (United Kingdom))
We use confocal Raman microscopy and a recently proposed vector analysis scheme to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO). [...]
2019 - 10.1088/2053-1583/aaf1dc
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15022  
20.
11 p, 562.6 KB Spin transport in hydrogenated graphene / Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M. M. (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Gmitra, Martin (University of Regensburg) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Kochan, Denis (University of Regensburg) ; Ortmann, Frank (Technische Universität Dresden) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Fabian, Jaroslav (Universität Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. [...]
2015 - 10.1088/2053-1583/2/2/022002
2D Materials, Vol. 2, Núm. 2 (June 2015) , art. 22002  
21.
8 p, 505.6 KB Quantum transport in chemically functionalized graphene at high magnetic field : Defect-induced critical states and breakdown of electron-hole symmetry / Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Cresti, Alessandro (Université Grenoble Alpes) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Unconventional magnetotransport fingerprints in the quantum Hall regime (with applied magnetic fields from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0. [...]
2014 - 10.1088/2053-1583/1/2/021001
2D Materials, Vol. 1, Núm. 2 (September 2014) , art. 21001  

Dipòsit Digital de Documents de la UAB : 40 registres trobats   inicianterior12 - 21següentfinal  anar al registre:
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