Dipòsit Digital de Documents de la UAB 4 registres trobats  La cerca s'ha fet en 0.01 segons. 
1.
20 p, 3.7 MB Bacterial endotoxin (lipopolysaccharide) binds to the surface of gold nanoparticles, interferes with biocorona formation and induces human monocyte inflammatory activation / Li, Yang (Hebei Normal University) ; Shi, Zhenzhen (Kansas State University. Department of Anatomy and Physiology) ; Radauer-Preiml, Isabella (University of Salzburg. Department of Molecular Biology) ; Andosch, Ancuela (University of Salzburg. Department of Molecular Biology) ; Casals Mercadal, Eudald (Vall d'Hebron Institut de Recerca) ; Luetz-Meindl, Ursula (University of Salzburg. Department of Molecular Biology) ; Cobaleda-Siles, Macarena (Vall d'Hebron Institut de Recerca) ; Lin, Zhoumeng (Kansas State University. Department of Anatomy and Physiology) ; Jaberi-Douraki, Majid (Kansas State University. Department of Anatomy and Physiology) ; Italiani, Paola (National Research Council) ; Horejs-Hoeck, Jutta (University of Salzburg. Department of Molecular Biology) ; Himly, Martin (University of Salzburg. Department of Molecular Biology) ; Monteiro-Riviere, Nancy A. (Kansas State University. Department of Anatomy and Physiology) ; Duschl, Albert (University of Salzburg. Department of Molecular Biology) ; Puntes, Víctor (Institut Català de Nanociència i Nanotecnologia) ; Boraschi, Diana (National Research Council)
Nanoparticles (NPs) are easily contaminated by bacterial endotoxin (lipopolysaccharide [LPS]). The presence of LPS can be responsible for many immune/inflammatory effects attributed to NPs. In this study, we examined the effects of LPS adsorption on the NP surface on the formation of a biocorona in biological fluids and on the subsequent inflammation-inducing activity of NPs. [...]
2017 - 10.1080/17435390.2017.1401142
Nanotoxicology, Vol. 11, Issue 9-10 (December 2017) , p. 1157-1175  
2.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  
3.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
4.
7 p, 1.2 MB designGG : an R-package and web tool for the optimal design of genetical genomics experiments / Li, Yang (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Swertz, Morris A. (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Vera Rodríguez, Gonzalo (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Fu, Jingyuan (University of Groningen. Department of Genetics (Groningen, Països Baixos)) ; Breitling, Rainer (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos)) ; Jansen, Ritsert C. (University of Groningen. Groningen Biomolecular Sciences and Biotechnology Institute (Haren, Països Baixos))
Background: High-dimensional biomolecular profiling of genetically different individuals in one or more environmental conditions is an increasingly popular strategy for exploring the functioning of complex biological systems. [...]
2009 - 10.1186/1471-2105-10-188
BMC Bioinformatics, Vol. 10, N. 188 (June 2009) , p. 1-7  

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