Dipòsit Digital de Documents de la UAB 651 registres trobats  inicianterior273 - 282següentfinal  anar al registre: La cerca s'ha fet en 0.07 segons. 
273.
6 p, 1.1 MB Transport fingerprints at graphene superlattice Dirac points induced by a boron nitride substrate / Martínez Gordillo, Rafael (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia)
We report peculiar transport fingerprints at the secondary Dirac points created by the interaction between graphene and boron nitride layers. By performing ab initio calculations, the electronic characteristics of the moiré patterns produced by the interaction between layers are first shown to be in good agreement with experimental data, and further used to calibrate the tight-binding model implemented for the transport study. [...]
2014 - 10.1103/PhysRevB.89.161401
Physical review B : Condensed matter and materials physics, Vol. 89, issue 16 (April 2014) , art. 161401  
274.
7 p, 817.2 KB Extremely fast and high Pb²⁺ removal capacity using a nanostructured hybrid material / López Marzo, Adaris María (Institut Català de Nanociència i Nanotecnologia) ; Pons Picart, Josefina (Universitat Autònoma de Barcelona. Departament de Química) ; Merkoçi, Arben (Institut Català de Nanociència i Nanotecnologia)
Ultra-fast toxic metal removal using a hybrid and nanostructured vaterite-poly(ethyleneimine) (NV-PEI) is reported. Especially for Pb²⁺ , an extremely high and fast adsorption capacity without precedents is observed. [...]
2014 - 10.1039/c4ta00985a
Journal of materials chemistry, Vol. 2, issue 23 (June 2014) , p. 8766-8772  
275.
7 p, 981.7 KB Anisotropic behavior of quantum transport in graphene superlattices : coexistence of ballistic conduction with Anderson insulating regime / Pedersen, Jesper Goor (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multiple scattering phenomena can strongly depend on the transport measurement geometry. [...]
2014 - 10.1103/PhysRevB.89.165401
Physical review B : Condensed matter and materials physics, Vol. 89, issue 16 (April 2014) , art. 165401  
276.
37 p, 1.6 MB An inkjet-printed field-effect transistor for label-free biosensing / Medina-Sánchez, Mariana (Institut Català de Nanociència i Nanotecnologia) ; Martínez-Domingo, Carme (Institut Català de Nanociència i Nanotecnologia) ; Ramon, Eloi (Institut de Microelectrònica de Barcelona) ; Merkoçi, Arben (Institut Català de Nanociència i Nanotecnologia)
A flexible, biological field-effect transistor (BioFET) for use in biosensing is reported. The BioFET is based on an organic thin-film transistor (OTFT) fabricated mainly by inkjet printing and subsequently functionalized with antibodies for protein recognition. [...]
2014 - 10.1002/adfm.201401180
Advanced functional materials, Vol. 24, issue 40 (Oct. 2014) , p. 6291-6302  
277.
35 p, 32.3 MB Strain-Engineered Ferroelastic Structures in PbTiO3 Films and Their Control by Electric Fields / Langenberg, Eric (Cornell University) ; Paik, Hanjong (Cornell University) ; Smith, Eva H. (Cornell University) ; Nair, Hari P. (Cornell University) ; Hanke, Isabelle (Leibniz-Institut für Kristallzüchtung) ; Ganschow, Steffen (Leibniz-Institut für Kristallzüchtung) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; Schlom, Darrell G. (Kavli Institute at Cornell for Nanoscale Science)
We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. [...]
2020 - 10.1021/acsami.0c04381
ACS applied materials & interfaces, Vol. 12, Issue 18 (May 2020) , p. 20691-20703  
278.
3 p, 121.6 KB James F. Scott (1942-2020) / Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Dawber, Matthew (Stony Brook University. Department of Physics and Astronomy) ; Gregg, Marty (Queen's University Belfast. School of Mathematics and Physics) ; Morrison, Finlay (University of St Andrews. School of Chemistry) ; Ramesh, Ramamoorthy (University of California (Berkeley, Califòrnia)) ; Zubko, Pavlo (University College London)
Obituari de James F. Soctt.
2020 - 10.1038/s41563-020-0692-x
Nature materials, Vol. 19, issue 6 (June 2020) , p. 580  
279.
6 p, 979.5 KB Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition / Lafont, F. (Laboratoire National de Métrologie et d'Essais) ; Ribeiro-Palau, Rebeca (Laboratoire National de Métrologie et d'Essais) ; Han, Z. (Institut polytechnique de Grenoble. Institut Néel) ; Cresti, Alessandro (Institut polytechnique de Grenoble. Institute of Microelectronics, Electromagnetism and Photonics) ; Delvallée, Alexandra (Laboratoire National de Métrologie et d'Essais) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bouchiat, Vincent (Institut polytechnique de Grenoble. Institut Néel) ; Ducourtieux, Sebastien (Laboratoire National de Métrologie et d'Essais) ; Schopfer, F. (Laboratoire National de Métrologie et d'Essais) ; Poirier, W. (Laboratoire National de Métrologie et d'Essais)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. [...]
2014 - 10.1103/PhysRevB.90.115422
Physical review B : Condensed matter and materials physics, Vol. 90, issue 11 (Sep. 2014) , art. 115422  
280.
40 p, 2.2 MB Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers / Avci, Can Onur (Institut Català de Nanociència i Nanotecnologia) ; Garello, Kevin (Institut Català de Nanociència i Nanotecnologia) ; Nistor, Corneliu (Institut Català de Nanociència i Nanotecnologia) ; Godey, Sylvie. (Institut Català de Nanociència i Nanotecnologia) ; Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Barla, Alessandro (Consiglio Nazionale Delle Ricerche. Istituto di Struttura della Materia) ; Valvidares, Manuel (ALBA Laboratori de Llum de Sincrotró) ; Pellegrin, Eric. (ALBA Laboratori de Llum de Sincrotró) ; Ghosh, Abhijit (ETH Zurich. Department of Materials) ; Miron, Ioan Mihai (SPINTEC) ; Boulle, Olivier (SPINTEC) ; Auffret, Stéphane (SPINTEC) ; Gaudin, Gilles (SPINTEC) ; Gambardella, Pietro (Institut Català de Nanociència i Nanotecnologia)
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 °C and characterized using x-ray-absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. [...]
2014 - 10.1103/PhysRevB.89.214419
Physical review B : Condensed matter and materials physics, Vol. 89, issue 21 (June 2014) , art. 214419  
281.
22 p, 1.1 MB Interdependence between training and magnetization reversal in granular Co-CoO exchange bias systems / Menéndez Dalmau, Enric (KU Leuven. Instituut voor Kern- en Stralingsfysica) ; Dias, T. (KU Leuven. Instituut voor Kern- en Stralingsfysica) ; Geshev, Julian (Instituto de Física, Universidade Federal Do Rio Grande Do sul (UFRGS)) ; López-Barbera, José Francisco (Institut Català de Nanociència i Nanotecnologia) ; Nogués, Josep (Institut Català de Nanociència i Nanotecnologia) ; Steitz, Roland (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH) ; Kirby, Brian (Brian J.) (National Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica)) ; Borchers, J. A. (National Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica)) ; Pereira, L. M. C. (KU Leuven. Instituut voor Kern- en Stralingsfysica) ; Vantomme, André (KU Leuven, Instituut voor Kern- en Stralingsfysica) ; Temst, Kristiaan (KU Leuven, Instituut voor Kern- en Stralingsfysica)
The interdependence between training and magnetization reversal in granular Co-CoO exchange bias (EB) systems prepared by O ion implantation in Co thin films is demonstrated by polarized neutron reflectometry. [...]
2014 - 10.1103/PhysRevB.89.144407
Physical review B : Condensed matter and materials physics, Vol. 89, issue 14 (Sep. 2014) , art. 144407  
282.
47 p, 1.9 MB Charge transport in polycrystalline graphene : challenges and opportunities / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Duong, Dinh Loc (Sungkyunkwan University. Institute for Basic Science) ; Nguyen, Van Luan (Sungkyunkwan University. Department of Energy Science) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Helsinki. Department of Physics) ; Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Lee, Young Hee (Sungkyunkwan University. Institute for Basic Science) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. [...]
2014 - 10.1002/adma.201401389
Advanced materials, Vol. 26, issue 30 (August 2014) , p. 5079-5094  

Dipòsit Digital de Documents de la UAB : 651 registres trobats   inicianterior273 - 282següentfinal  anar al registre:
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