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1.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
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2.
21 p, 746.1 KB Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola d'Enginyeria) ; Chen, H. (University of Warwick. School of Engineering) ; Gammon, Peter (University of Warwick. School of Engineering) ; Jennings, M. R. (University of Warwick. School of Engineering) ; Thomas, M. (University of Warwick. School of Engineering) ; Fisher, C. A. (University of Warwick. School of Engineering) ; Sharma, Y. K. (University of Warwick. School of Engineering) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Chmielowska, M. (Centre National de la Recherche Scientifique (França). Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Chenot, S. (Centre National de la Recherche Scientifique (França). Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola d'Enginyeria) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola d'Enginyeria) ; Cordier, Y. (Centre National de la Recherche Scientifique (França). Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. [...]
2015 - 10.1088/0957-4484/26/11/115203
Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203  
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3.
5 p, 602.1 KB 3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192  
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Vegeu també: autors amb noms similars
3 Sharma, Y. K.
2 Sharma, Yogesh
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