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32 p, 2.7 MB Ultralow-dielectric-constant amorphous boron nitride / Hong, Seokmo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Lee, Chang-Seok (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Lee, Min-Hyun (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Lee, Yeongdong (Ulsan National Institute of Science and Technology. School of Materials Science and Engineering) ; Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Yoon, Seong In (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Ihm, Kyuwook Ihm (Pohang Accelerator Laboratory) ; Kim, Ki-Jeong (Pohang Accelerator Laboratory) ; Shin, Tae Joo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Kim, Sang Won (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Jeon, Eun-chae (University of Ulsan. School of Materials Science and Engineering) ; Jeon, Hansol (Ulsan National Institute of Science and Technology. School of Materials Science and Engineering) ; Kim, Ju-Young (Ulsan National Institute of Science and TechnologY. School of Materials Science and Engineering) ; Lee, Hyung-Ik (Samsung Advanced Institute of Technology. Analytical Engineering Group) ; Lee, Zonghoon (Center for Multidimensional Carbon Materials (Ulsan, Corea del Nord)) ; Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Chhowalla, Manish (University of Cambridge. Department of Materials Science & Metallurgy) ; Shin, Hyeon-Jin (Samsung Advanced Institute of Technology. Inorganic Material Lab.) ; Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low-Dimensional Carbon Materials Center)
Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. [...]
2020 - 10.1038/s41586-020-2375-9
Nature, Vol. 582, issue 7813 (June 2020) , p. 511-514  
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