UAB Digital Repository of Documents 7 records found  Search took 0.00 seconds. 
1.
34 p, 774.3 KB Lipid monolayer formation and lipid exchange monitored by a graphene field-effect transistor / Blaschke, Benno M. (Technische Universität München. Walter Schottky Institut) ; Böhm, Philip (Ludwig-Maximilians-Universität. Center for NanoScience) ; Drieschner, Simon (Technische Universität München. Walter Schottky Institut) ; Nickel, Bert (Ludwig-Maximilians-Universität. Center for NanoScience) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Anionic and cationic lipids are key molecules involved in many cellular processes; their distribution in biomembranes is highly asymmetric, and their concentration is well-controlled. Graphene solution-gated field-effect transistors (SGFETs) exhibit high sensitivity toward the presence of surface charges. [...]
2018 - 10.1021/acs.langmuir.8b00162
Langmuir, Vol. 34, issue 14 (April 2018) , p. 4224-4233  
2.
9 p, 943.7 KB Graphene field-effect transistors for in vitro and ex vivo recordings / Kireev, D. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Zadorozhnyi, I. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Qiu, T. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Sarik, D. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Brings, F. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Wu, T. (Shanghai Institute of Microsystem and Information Technology) ; Seyock, S. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Maybeck, V. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Lottner, M. (Technische Universität München. Walter Schottky Institut) ; Blaschke, Benno M (Technische Universität München. Walter Schottky Institut) ; Garrido, Jose (Technische Universität München. Walter Schottky Institut) ; Xie, X. (Shanghai Institute of Microsystem and Information Technology) ; Vitusevich, S. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Wolfrum, B. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse) ; Offenhäusser, A. (Jülich Forschungszentrum. Institut für Biologische Informationsprozesse)
Recording extracellular potentials from electrogenic cells (especially neurons) is the hallmark destination of modern bioelectronics. While fabrication of flexible and biocompatible in vivo devices via silicon technology is complicated and time-consuming, graphene field-effect transistors (GFETs), instead, can easily be fabricated on flexible and biocompatible substrates. [...]
2017 - 10.1109/TNANO.2016.2639028
IEEE Transactions on Nanotechnology, Vol. 16, issue 1 (Jan. 2017) , p. 140-147  
3.
12 p, 8.3 MB Flexible graphene transistors for recording cell action potentials / Blaschke, Benno M. (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Lottner, Martin (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Drieschner, Simon (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Stoiber, Karolina (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Rousseau, Lionel (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Lissourges, Gaëlle (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. [...]
2016 - 10.1088/2053-1583/3/2/025007
2D Materials, Vol. 3, issue 2 (June 2016) , art. 25007  
4.
19 p, 8.9 MB Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitors / Drieschner, Simon (Technische Universität München) ; Seckendorff, Maximilian Von (Technische Universität München) ; Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ; Wohlketzetter, Jörg (Technische Universität München) ; Blaschke, Benno M. (Technische Universität München) ; Stutzmann, Martin (Technische Universität München) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Supercapacitors are called to play a prominent role in the newly emerging markets of electric vehicles, flexible displays and sensors, and wearable electronics. In order to compete with current battery technology, supercapacitors have to be designed with highly conductive current collectors exhibiting high surface area per unit volume and uniformly coated with pseudocapacitive materials, which is crucial to boost the energy density while maintaining a high power density. [...]
2018 - 10.1088/1361-6528/aab4c2
Nanotechnology, Vol. 29, Núm. 22 (April 2018) , art. 225402  
5.
13 p, 4.7 MB Frequency response of electrolyte-gated graphene electrodes and transistors / Drieschner, Simon (Technische Universität München. Physik Department) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Viana Casals, Damià (Institut Català de Nanociència i Nanotecnologia) ; Makrygiannis, Evangelos (Technische Universität München. Physik Department) ; Blaschke, Benno M. (Technische Universität München. Physik Department) ; Vieten, Josua (Technische Universität München. Physik Department) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
The interface between graphene and aqueous electrolytes is of high importance for applications of graphene in the field of biosensors and bioelectronics. The graphene/electrolyte interface is governed by the low density of states of graphene that limits the capacitance near the Dirac point in graphene and the sheet resistance. [...]
2017 - 10.1088/1361-6463/aa5443
Journal of physics D: applied physics, Vol. 50, no. 9 (Feb. 2017) , art. 095304  
6.
16 p, 4.4 MB Mapping brain activity with flexible graphene micro-transistors / Blaschke, Benno M. (Technische Universität München. Physik Department) ; Tort-Colet, Núria (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Weinert, Julia (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Rousseau, Lionel (Université Paris-Est. Laboratoire d'Electronique, Systèmes de Communication et Microsystèmes) ; Heimann, Axel (Johannes Gutenberg-Universität Mainz) ; Drieschner, Simon (Technische Universität München. Physik Department) ; Kempski, Oliver (Johannes Gutenberg-Universität Mainz) ; Villa, Rosa (Institut de Microelectrònica de Barcelona) ; Sánchez-Vives, María V. (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e. [...]
2017 - 10.1088/2053-1583/aa5eff
2D materials, Vol. 4, no. 2 (June 2017) , art. 025040  
7.
18 p, 11.9 MB High surface area graphene foams by chemical vapor deposition / Drieschner, Simon (Technische Universität München. Physik Department) ; Weber, Michael (Technische Universität München. Physik Department) ; Wohlketzetter, Jörg (Technische Universität München. Physik Department) ; Vieten, Josua (Technische Universität München. Physik Department) ; Makrygiannis, Evangelos (Technische Universität München. Physik Department) ; Blaschke, Benno M. (Technische Universität München. Physik Department) ; Morandi, Vittorio (Consiglio Nazionale delle Ricerche. Istituto per la microelettronica e microsistemi) ; Colombo, Luigi (Texas Instruments. Analog Technology Development) ; Bonaccorso, Francesco (Istituto Italiano di Tecnologia. Graphene Labs) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Three-dimensional (3D) graphene-based structures combine the unique physical properties of graphene with the opportunity to get high electrochemically available surface area per unit of geometric surface area. [...]
2016 - 10.1088/2053-1583/3/4/045013
2D Materials, Vol. 3, no. 4 (October 2016) , art. 045013  

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