UAB Digital Repository of Documents 14 records found  1 - 10next  jump to record: Search took 0.01 seconds. 
1.
12 p, 363.5 KB Large flexoelectric anisotropy in paraelectric Barium Titanate / Narvaez, Jackeline (Institut Català de Nanociència i Nanotecnologia) ; Saremi, Sahar (Institut Català de Nanociència i Nanotecnologia) ; Hong, Jiawang (Oak Ridge National Laboratory. Materials Science and Technology Division) ; Stengel, Massimiliano (Institut de Ciència de Materials de Barcelona) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
The bending-induced polarization of barium titanate single crystals has been measured with an aim to elucidate the origin of the large difference between theoretically predicted and experimentally measured flexoelectricity in this material. [...]
2015 - 10.1103/PhysRevLett.115.037601
Physical review letters, Vol. 115, Issue 3 (July 2015) , art. 37601  
2.
20 p, 898.1 KB Giant reversible nanoscale piezoresistance at room temperature in Sr₂IrO₄ thin films / Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; López Mir, Laura (Institut Català de Nanociència i Nanotecnologia) ; Paradinas Aranjuelo, Marcos (Institut de Ciència de Materials de Barcelona) ; Holy, Vaclav (Charles University. Department of Condensed Matter Physics) ; Železný, Jakuv (Institute of Physics ASCR) ; Yi, Di (University of California. Department of Materials Science and Engineering) ; Suresha, Siriyara J. (Lawrence Berkeley National Laboratory. Materials Sciences Division) ; Liu, Jian (University of California. Department of Physics) ; Rayan Serrao, Claudy (University of California. Department of Materials Science and Engineering) ; Ramesh, Ramamoorthy (University of California. Department of Physics) ; Ocal García, Carmen (Institut de Ciència de Materials de Barcelona) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow bandgap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. [...]
2015 - 10.1039/c4nr06954d
Nanoscale, Vol. 7, Issue 8 (February 2015) , p. 3453-3459  
3.
21 p, 746.1 KB Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Chen, H. (University of Warwick. School of Engineering) ; Gammon, P.M. (University of Warwick. School of Engineering) ; Jennings, M.R. (University of Warwick. School of Engineering) ; Thomas, M. (University of Warwick. School of Engineering) ; Fisher, C.A. (University of Warwick. School of Engineering) ; Sharma, Y.K. (University of Warwick. School of Engineering) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Chmielowska, M. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Chenot, S. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Cordier, Y. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. [...]
2015 - 10.1088/0957-4484/26/11/115203
Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203  
4.
7 p, 2.4 MB Flexoelectric MEMS : Towards an electromechanical strain diode / Bhaskar, Umesh K. (Institut Català de Nanociència i Nanotecnologia) ; Banerjee, N. (University of Twente) ; Abdollahi, Amir (Institut Català de Nanociència i Nanotecnologia) ; Solanas, E. (Lyncée Tec SA) ; Rijnders, G. (University of Twente) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response.
2016 - 10.1039/c5nr06514c
Nanoscale, Vol. 8, Issue 3 (January 2016) , p. 1293-1298  
5.
23 p, 2.2 MB Nanomechanics of flexoelectric switching / Očenášek, Jan (University of West Bohemia in Pilsen) ; Lu, Haidong (University of Nebraska-Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Alcalá, Jorge (Universitat Politècnica de Catalunya. Departament de Ciència dels Materials i Enginyeria Metal·lúrgica) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
We examine the phenomenon of flexoelectric switching of polarization in ultrathin films of barium titanate induced by a tip of an atomic force microscope (AFM). The spatial distribution of the tip-induced flexoelectricity is computationally modeled both for perpendicular mechanical load (point measurements) and for sliding load (scanning measurements), and compared with experiments. [...]
2015 - 10.1103/PhysRevB.92.035417
Physical Review B, Vol. 92, Issue 3 (July 2015) , art. 035417  
6.
6 p, 937.0 KB Converse flexoelectricity yields large piezoresponse force microscopy signals in non-piezoelectric materials / Abdollahi, Amir (Universitat Politècnica de Catalunya) ; Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; Arias, Irene (Universitat Politècnica de Catalunya) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Converse flexoelectricity is a mechanical stress induced by an electric polarization gradient. It can appear in any material, irrespective of symmetry, whenever there is an inhomogeneous electric field distribution. [...]
2019 - 10.1038/s41467-019-09266-y
Nature communications, Vol. 10 (March 2019) , art. 1266  
7.
9 p, 1.8 MB On the persistence of polar domains in ultrathin ferroelectric capacitors / Zubko, Pavlo (University College London) ; Lu, Haidong (University of Nebraska-Lincoln) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Martí Rovirosa, Xavier (Academy of Sciences of the Czech Republic) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. [...]
2017 - 10.1088/1361-648X/aa73c3
Journal of Physics Condensed Matter, Vol. 29, Núm. 28 (July 2017) , art. 284001  
8.
129 p, 3.7 MB Flexoelectricity in biomaterials / Vásquez Sancho, Fabián, autor. ; Catalan Bernabé, Gustau, supervisor acadèmic. ; Sort Viñas, Jordi, supervisor acadèmic. ; Universitat Autònoma de Barcelona. Departament de Física. ; Institut Català de Nanociència i Nanotecnologia.
La flexoelectricidad es la capacidad de los materiales para generar electricidad al deformarse de forma no homogénea. Es una propiedad de todos los materiales y, en principio, posible que existiera en biomateriales. [...]
Flexoelectricity is the ability of materials to generate electricity upon being bent, or, more generally, upon being inhomogeneously deformed. It is a property that is allowed by symmetry in all materials and, therefore, it was in principle possible that it existed in biomaterials –one precedent existed for their observation in inner-ear stereocilia, in fact, pointing to its importance for acousto-electric transduction in mammalian hearing. [...]

[Bellaterra] : Universitat Autònoma de Barcelona, 2018.  
9.
16 p, 719.6 KB Above-Bandgap Photovoltages in Antiferroelectrics / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
The closed circuit photocurrent and open circuit photovoltage of antiferroelectric thin films were characterized both in their ground (antipolar) state and in their polarized state. A sharp transition happens from near zero to large photovoltages as the polarization is switched on, consistent with the activation of the bulk photovoltaic effect. [...]
2016 - 10.1002/adma.201603176
Advanced materials, Vol. 28, Issue 43 (November 2016) , p. 9644-9647  
10.
18 p, 697.7 KB Mechanical tuning of LaAIO₃ SrTiO₃ interface conductivity / Sharma, P. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Ryu, S. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Burton, J.D. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Paudel, T.R. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Huang, Z. (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Ariando, None (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Tsymbal, E.Y. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (Department of Materials Science and Engineering, University of Wisconsin-Madison) ; Gruverman, A. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. [...]
2015 - 10.1021/acs.nanolett.5b01021
Nano letters, Vol. 15, issue 5 (May 2015) , p. 3547-3551  

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