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10 p, 5.6 MB |
Experimental Demonstration of a Magnetically Induced Warping Transition in a Topological Insulator Mediated by Rare-Earth Surface Dopants
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Muñiz Cano, Beatriz (IMDEA Nanociencia) ;
Ferreiros, Yago (IMDEA Nanociencia) ;
Pantaleón, Pierre A. (IMDEA Nanociencia) ;
Dai, Ji (ALBA Laboratori de Llum de Sincrotró) ;
Tallarida, Massimo (ALBA Laboratori de Llum de Sincrotró) ;
Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ;
Marinova, Vera (Institute of Optical Materials and Technologies Acad. G. Bontchev) ;
García-Díez, Kevin (Institut Català de Nanociència i Nanotecnologia) ;
Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Miranda, Rodolfo (Universidad Autónoma de Madrid) ;
Camarero, Julio (Universidad Autónoma de Madrid. Departamento de Física de la Materia Condensada) ;
Guinea, Francisco (IMDEA Nanociencia) ;
Silva-Guillén, Jose Angel (IMDEA Nanociencia) ;
Valbuena, Miguel Ángel (IMDEA Nanociencia)
Magnetic topological insulators constitute a novel class of materials whose topological surface states (TSSs) coexist with long-range ferromagnetic order, eventually breaking time-reversal symmetry. The subsequent bandgap opening is predicted to co-occur with a distortion of the TSS warped shape from hexagonal to trigonal. [...]
2023 - 10.1021/acs.nanolett.3c00587
Nano letters, Vol. 23, Issue 13 (July 2023) , p. 6249-6258
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3.
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10 p, 331.0 KB |
Electronic properties of single-layer and multilayer transition metal dichalcogenides MX₂ (M = Mo, W and X = S, Se)
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Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ;
Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ;
López-Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ;
Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ;
Cappelluti, Emmanuele (Consiglio Nazionale delle Ricerche. Istituto de Sistemi Complessi) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. [...]
2014 - 10.1002/andp.201400128
Annalen der Physik, Vol. 526, issue 9-10 (Oct. 2014) , p. 347-357
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4.
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13 p, 2.2 MB |
Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
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Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ;
López Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ;
Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ;
Cappelluti, Emmanuele (Istituto de Sistemi Complessi) ;
Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMDs) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. [...]
2014 - 10.1088/2053-1583/1/3/034003
2D Materials, Vol. 1, Núm. 3 (December 2014) , art. 34003
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11 p, 3.4 MB |
Electronic structure of 2H-NbSe₂ single-layers in the CDW state
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Silva-Guillén, Jose Angel (Fundación IMDEA Nanociencia) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Guinea, Francisco (Fundación IMDEA Nanociencia) ;
Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona)
Adensity functional theory study of NbSe₂"Qsingle-layers in the normal non-modulated and the 3xQ3 CDW states is reported. Weshow that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. [...]
2016 - 10.1088/2053-1583/3/3/035028
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35028
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214 p, 55.9 MB |
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
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Ferrari, Andrea C. (University of Cambridge) ;
Bonaccorso, Francesco (Istituto Italiano di Tecnologia) ;
Fal'ko, Vladimir (Lancaster University. Department of Physics) ;
Novoselov, Konstantin S. (University of Manchester) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Bøggild, Peter (Technical University of Denmark) ;
Borini, Stefano (Nokia Technologies) ;
Koppens, Frank (Institut de Ciències Fotòniques) ;
Palermo, Vincenzo (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ;
Pugno, Nicola (Queen Mary University of London) ;
Garrido, Jose (Technische Universität München) ;
Sordan, Roman (Politecnico di Milano) ;
Bianco, Alberto (Institut de Biologie Moleculaire et Cellulaire) ;
Ballerini, Laura (Università di Trieste) ;
Prato, Maurizio (Università di Trieste. Dipartimento di Scienze Farmaceutiche) ;
Lidorikis, Elefterios (University of Ioannina. Department of Materials Science and Engineering) ;
Kivioja, Jani (Nokia Technologies) ;
Marinelli, Claudio (Wilton Centre) ;
Ryhänen, Tapani (Nokia Technologies) ;
Morpurgo, Alberto (Université de Genève. Département de Physique de la Matière Condensée) ;
Coleman, Jonathan N. (Trinity College) ;
Nicolosi, Valeria (Trinity College) ;
Colombo, Luigi (Texas Instruments Incorporated) ;
Fert, Albert (Université de Paris-Sud) ;
Garcia-Hernandez, Mar (Instituto de Ciencia de Materiales de Madrid) ;
Bachtold, Adrian (Institut de Ciències Fotòniques) ;
Schneider, Gregory F. (Leiden University) ;
Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ;
Dekker, Cees (Delft University of Technology) ;
Barbone, Matteo (University of Cambridge) ;
Sun, Zhipei (University of Cambridge) ;
Galiotis, Costas (University of Patras. Department of Chemical Engineering) ;
Grigorenko, Alexander N. (University of Manchester) ;
Konstantatos, Gerasimos (Institut de Ciències Fotòniques) ;
Kis, Andras (Ecole Polytechique Fédérale de Lausanne) ;
Katsnelson, Mikhail (Radboud University Nijmegen) ;
Vandersypen, Lieven (Delft University of Technology) ;
Loiseau, Annick (Laboratoire d'Etude des Microstructures) ;
Morandi, Vittorio (CNR-Istituto per la Microelettronica e i Microsistemi) ;
Neumaier, Daniel (Advanced Microelectronic Centre Aachen) ;
Treossi, Emanuele (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ;
Pellegrini, Vittorio (Scuola Normale Superiore (Pisa, Itàlia)) ;
Polini, Marco (Scuola Normale Superiore (Pisa, Itàlia)) ;
Tredicucci, Alessandro (Scuola Normale Superiore (Pisa, Itàlia)) ;
Williams, Gareth M. (Airbus UK Ltd) ;
Hee Hong, Byung (Seoul National University. Department of Chemistry) ;
Ahn, Jong-Hyun (Yonsei University) ;
Kim, Jong Min (University of Oxford. Department of Engineering Science) ;
Zirath, Herbert (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ;
Van Wees, Bart J. (University of Groningen) ;
Van Der Zant, Herre S. J. (Delft University of Technology) ;
Occhipinti, Luigi (STMicroelectronics) ;
Di Matteo, Andrea (STMicroelectronics) ;
Kinloch, Ian A. (University of Manchester) ;
Seyller, Thomas (Technische Universität Chemnitz) ;
Quesnel, Etienne (Institut LITEN) ;
Feng, Xinliang (Max-Planck-Institut für Polymerforschung) ;
Teo, Ken (Aixtron Ltd.) ;
Rupesinghe, Nalin (Aixtron Ltd.) ;
Hakonen, Pertti (Aalto University) ;
Neil, Simon R. T. (CambridgeIP) ;
Tannock, Quentin (CambridgeIP) ;
Löfwander, Tomas (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ;
Kinaret, Jari (Chalmers University of Technology. Department of Applied Physics)
We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. [...]
2015 - 10.1039/c4nr01600a
Nanoscale, Vol. 7, Issue 11 (March 2015) , p. 4598-4810
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