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UAB Digital Repository of Documents 3 records found  Search took 0.02 seconds. 
1.
12 p, 510.0 KB A flexoelectric microelectromechanical system on silicon / Bhaskar, Umesh K. (Institut Català de Nanociència i Nanotecnologia) ; Banerjee, Nirupam (University of Twente. Faculty of Science and Technology) ; Abdollahi, Amir (Institut Català de Nanociència i Nanotecnologia) ; Wang, Zhe (Cornell University. Department of Materials Science and Engineering) ; Schlom, Darrell G. (Cornell University. Department of Materials Science and Engineering) ; Rijnders, Guus (University of Twente. Faculty of Science and Technology) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. [...]
2016 - 10.1038/nnano.2015.260
Nature Nanotechnology, Vol. 11, issue 3 (March 2016) , p. 263-266  
Detailed record -
2.
7 p, 2.4 MB Flexoelectric MEMS : Towards an electromechanical strain diode / Bhaskar, Umesh K. (Institut Català de Nanociència i Nanotecnologia) ; Banerjee, N. (University of Twente) ; Abdollahi, Amir (Institut Català de Nanociència i Nanotecnologia) ; Solanas, E. (Lyncée Tec SA) ; Rijnders, G. (University of Twente) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response.
2016 - 10.1039/c5nr06514c
Nanoscale, Vol. 8, Issue 3 (January 2016) , p. 1293-1298  
Detailed record -
3.
93 p, 11.3 MB Towards Oxide Electronics : a Roadmap / Coll, Mariona (Institut de Ciència de Materials de Barcelona) ; Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona) ; Althammer, Matthias (Technische Universität München. Physik Department) ; Bibes, Manuel (Unité Mixte de Physique) ; Boschker, Hans (Max Planck Institute for Solid State Research) ; Calleja, Ana (OXOLUTIA S.L.) ; Cheng, Guanglei (Pittsburgh Quantum Institute) ; Cuoco, Mario (Università di Salerno) ; Dittmann, Regina (Peter Grünberg Institut) ; Dkhil, Brahim (Université Paris-Saclay) ; El Baggari, Ismail (Cornell University) ; Fanciulli, Marco (University of Milano Bicocca. Department of Materials Science) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Fortunato, Elvira (CEMOP/UNINOVA) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Fujita, Shizuo (Kyoto University) ; Garcia, Vincent (Unité Mixte de Physique) ; Goennenwein, Sebastian T. B. (Technische Universität Dresden) ; Granqvist, Claes Göran (Upp sala University) ; Grollier, Julie (Unité Mixte de Physique) ; Gross, Rudolf (Nanosystems Initiative Munich (NIM)) ; Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ; Herranz Casabona, Gervasi (Institut de Ciència de Materials de Barcelona) ; Hono, Kazuhiro (National Institute for Materials Science) ; Houwman, Evert (University of Twente) ; Huijben, Mark (University of Twente) ; Kalaboukhov, Aleksey (MC2. Chalmers University of Technology) ; Keeble, David J. (University of Dundee) ; Koster, Gertjan (University of Twente) ; Kourkoutis, Lena Fitting (Cornell University) ; Levy, Jeremy (Pittsburgh Quantum Institute) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ; MacManus-Driscoll, Judith L. (University of Cambridge. Department of Materials Science and Metallurgy) ; Mannhart, Jochen (Max Planck Institute for Solid State Research) ; Martins, Rodrigo (MDM Laboratory) ; Menzel, Stephan (Pittsburgh Quantum Institute) ; Mikolajick, Thomas (Chair of Nanoelectronic Materials) ; Napari, Mari (University of Cambridge. Department of Materials Science and Metallurgy) ; Nguyen, Duc Minh (University of Twente) ; Niklasson, Gunnar A. (Uppsala University) ; Paillard, Charles (University of Arkansas. Physics Department) ; Panigrahi, Shrabani (CEMOP/UNINOVA) ; Rijnders, Guus (University of Twente) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Sanchis Kilders, Pablo (Universitat Politècnica de València) ; Sanna, S. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Schlom, Darrell G (Cornell University. Department of Material Science and Engineering) ; Schroeder, U. (NaMLab gGmbH) ; Shen, K. M. (Cornell University. Department of Physics) ; Siemon, A. (Institut für Werkstoffe der Elektrotechnik) ; Spreitzer, M. (Jožef Stefan Institute) ; Sukegawa, H. (Research Center for Magnetic and Spintronic Materials) ; Tamayo, R. (OXOLUTIA S.L.) ; van den Brink, J. (Institute for Theoretical Solid State Physics) ; Pryds, N. (Technical University of Denmark. Department of Energy Storage and Conversion) ; Granozio, F. M. (CNR-SPIN. Naples Unit)
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. [...]
2019 - 10.1016/j.apsusc.2019.03.312
Applied surface science, Vol. 482 (July 2019) , p. 1-93  
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