UAB Digital Repository of Documents 1 records found  Search took 0.00 seconds. 
1.
12 p, 8.3 MB Flexible graphene transistors for recording cell action potentials / Blaschke, Benno M. (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Lottner, Martin (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Drieschner, Simon (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Stoiber, Karolina (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Rousseau, Lionel (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Lissourges, Gaëlle (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. [...]
2016 - 10.1088/2053-1583/3/2/025007
2D Materials, Vol. 3, issue 2 (June 2016) , art. 25007  

Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.