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UAB Digital Repository of Documents 2 records found  Search took 0.00 seconds. 
1.
11 p, 5.7 MB Investigation on the conductive filament growth dynamics in resistive switching memory via a Universal Monte Carlo Simulator / Li, Yu (Chinese Academy of Sciences. Institute of Microelectronics (Beijing, Xina)) ; Zhang, Meiyun (Jiangsu National Synergetic Innovation Center for Advanced Materials) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing, Xina)) ; Teng, Jiao (University of Science and Technology (Beijing, Xina)) ; Liu, Qi (Jiangsu National Synergetic Innovation Center for Advanced Materials) ; Lv, Hangbing (Jiangsu National Synergetic Innovation Center for Advanced Materials) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Jiangsu National Synergetic Innovation Center for Advanced Materials)
In resistive random access memories, modeling conductive filament growing dynamics is important to understand the switching mechanism and variability. In this paper, a universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. [...]
2017 - 10.1038/s41598-017-11165-5
Scientific reports, Vol. 7 (Sep. 2017) , art. 11204  
Detailed record - Creative Commons
2.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  
Detailed record - Creative Commons

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