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13 p, 3.1 MB |
Electrochemical characterization of GaN surface states
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Winnerl, Andrea (Technische Universität München. Physik Department) ;
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ;
Stutzmann, Martin (Walter Schottky Institut)
In this work, we present a systematic study of the electrochemical properties of metal-organic chemical vapor deposition and hybrid vapor phase epitaxy grown n-type GaN in aqueous electrolytes. For this purpose, we perform cyclic voltammetry and impedance spectroscopy measurements over a wide range of potentials and frequencies, using a pure aqueous electrolyte and adding two different types of redox couples, as well as applying different surface treatments to the GaN electrodes. [...]
2017 -  10.1063/1.4995429
Journal of applied physics, Vol. 122, issue 4 (July 2017) , art. 45302
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11 p, 213.0 KB |
Physical model of the contact resistivity of metal-graphene junctions
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Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. [...]
2014 - 10.1063/1.4874181
Journal of applied physics, Vol. 115, issue 16 (April 2014) , art. 164513
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9 p, 2.6 MB |
Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes
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Petzold, S. (Technische Universität Darmstadt. Institute of Materials Science) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Sharath, S. U. (Technische Universität Darmstadt. Institute of Materials Science) ;
Muñoz Gorriz, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Vogel, Tobias (Technische Universität Darmstadt. Institute of Materials Science) ;
Piros, E. (Technische Universität Darmstadt. Institute of Materials Science.) ;
Kaiser, Nico (Technische Universität Darmstadt. Institute of Materials Science) ;
Eilhardt, R. (Technische Universität Darmstadt. Institute of Materials Science) ;
Zintler, A. (Technische Universität Darmstadt. Institute of Materials Science) ;
Molina-Luna, L. (Technische Universität Darmstadt. Institute of Materials Science) ;
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Alff, Lambert (Technische Universität Darmstadt. Institute of Materials Science)
In this work, analysis and simulation of all experimentally observed switching modes in hafnium oxide based resistive random access memories are carried out using a simplified electrical conduction model. [...]
2019 - 10.1063/1.5094864
Journal of applied physics, Vol. 125, issue 23 (June 2019) , art. 234503
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8 p, 652.2 KB |
Integrability of Hamiltonian systems with two degrees of freedom and homogenous potential of degree zero
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Llibre, Jaume (Universitat Autònoma de Barcelona. Departament de Matemàtiques) ;
Valls, Clàudia 1973- (Universidade de Lisboa. Instituto Superior Técnico. Departamento de Matemàtica)
We provide necessary conditions in order that the Hamiltonian systems with Hamiltonian H = 1/2 (p2 1 + p2 2) + V (q1,q2), and one of the following potentials V1 = a0q1 + a1q2/a2q1 + a3q2, V2 = a0q2 1 + a1q1q2 + a2q2 2/a3q2 1 + a4q1q2 + a5q2 2, V3 = a0qn 2 + a1qn−1 2 q1 + . [...]
2018 - 10.4236/jamp.2018.611184
Journal of Applied Mathematics and Physics, Vol. 6, Num. 11 (November 2018) , p. 2192-2201
2 documents
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15 p, 376.8 KB |
Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks
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Sakai, Joe (Laboratoire GREMAN (Tours)) ;
Bavencoffe, Maxime (Laboratoire GREMAN (Tours)) ;
Negulescu, Beatrice (Laboratoire GREMAN (Tours)) ;
Limelette, Patrice (Laboratoire GREMAN (Tours)) ;
Wolfman, Jérôme (Laboratoire GREMAN (Tours)) ;
Tateyama, Akinori (Tokyo Institute of Technology) ;
Funakubo, Hiroshi (Tokyo Institute of Technology)
We prepared a stacked structure consisting of a quasi-free-standing functional oxide thin film and a ceramic piezoelectric disk and observed the effect of the piezoelectric disk deformation on the resistance of the thin film. [...]
2019 - 10.1063/1.5083941
Journal of applied physics, Vol. 125, issue 11 (March 2019) , art. 115102
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7 p, 2.0 MB |
Thermodynamic conditions during growth determine the magnetic anisotropy in epitaxial thin-films of La₀.₇ Sr₀.₃MnO₃
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Vila-Fungueiriño, J. M. (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares) ;
Bui, Cong Tinh (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares) ;
Rivas Murias, B. (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares) ;
Winkler, Elin (Centro Atómico Bariloche) ;
Milano, J. (Centro Atómico Bariloche) ;
Santiso, José (Institut Català de Nanociència i Nanotecnologia) ;
Rivadulla, Francisco (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares)
The suitability of a particular material for use in magnetic devices is determined by the process of magnetization reversal/relaxation, which in turn depends on the magnetic anisotropy. Therefore, designing new ways to control magnetic anisotropy in technologically important materials is highly desirable. [...]
2016 - 10.1088/0022-3727/49/31/315001
Journal of Physics D: Applied Physics, Vol. 49, Issue 31 (August 2016) , art. 315001
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