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UAB Digital Repository of Documents 5 records found  Search took 0.01 seconds. 
1.
2 p, 530.8 KB ICTV Virus Taxonomy Profile : Potyviridae 2022 / Inoue-Nagata, Alice K. (Embrapa Vegetables) ; Jordan, Ramon (U.S. Department of Agriculture (USDA)) ; Kreuze, Jan (International Potato Center (CIP)) ; Li, Fan (Yunnan Agricultural University) ; Lopez-Moya, Juan Jose (Centre de Recerca en Agrigenòmica) ; Mäkinen, Kristiina (University of Helsinki) ; Ohshima, Kazusato (Saga University) ; Wylie, Stephen (Murdoch University) ; ICTV Report Consortium
The family Potyviridae includes plant viruses with single-stranded, positive-sense RNA genomes of 8-11 kb and flexuous filamentous particles 650-950 nm long and 11-20 nm wide. Genera in the family are distinguished by the host range, genomic features and phylogeny of the member viruses. [...]
2022 - 10.1099/jgv.0.001738
The Journal of general virology, Vol. 103, Issue 5 (May 2022)  
Detailed record - Creative Commons
2.
6 p, 1.6 MB A study on free-standing 3C-SiC bipolar power diodes / Li, Fan (University of Warwick. School of Engineering) ; Renz, Arne Benjamin (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick. School of Engineering) ; Gammon, Peter (University of Warwick. School of Engineering) ; La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ; Jennings, Mike (Swansea University. College of Engineering) ; Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 - 10.1063/5.0054433
Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101  
Detailed record -
3.
22 p, 4.1 MB Status and prospects of cubic silicon carbide power electronics device technology / Li, Fan (Newport Wafer Fab) ; Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Evans, Jonathan Edward (Swansea University. Faculty of Science) ; Fisher, Craig Arthur (Swansea University. Faculty of Science) ; Monaghan, Finn Alec (Swansea University. Faculty of Science) ; Mawby, Philip Andrew (The University of Warwick. School of Engineering) ; Jennings, Mike (Swansea University. Faculty of Science)
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. [...]
2021 - 10.3390/ma14195831
Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831  
Detailed record - Creative Commons
4.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
Detailed record -
5.
5 p, 602.1 KB 3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192  
Detailed record -

See also: similar author names
34 Li, F.
1 Li, F.-W.
1 Li, Fangbai
1 Li, Fay-Wei
1 Li, Fei
2 Li, Feifei
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