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1.
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9 p, 2.5 MB |
Hard superconducting gap in germanium
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Tosato, Alberto (Delft University of Technology) ;
Levajac, Vukan (Delft University of Technology) ;
Wang, Ji-Yin (Delft University of Technology) ;
Boor, Casper J. (Delft University of Technology) ;
Borsoi, Francesco (Delft University of Technology) ;
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Borja, Carla (Institut Català de Nanociència i Nanotecnologia) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ;
Veldhorst, Menno (Delft University of Technology) ;
Scappucci, Giordano (Delft University of Technology)
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered by the difficulty in obtaining a superconducting hard gap, that is, a gap free of subgap states. [...]
2023 -  10.1038/s43246-023-00351-w
Communications Materials, Vol. 4 (April 2023) , art. 23
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2.
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13 p, 3.3 MB |
Tubular C3N4 Nanotubes as Metal-Free Sulfur Hosts toward Stable Lithium-Sulfur Batteries
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Zhang, Chaoqi (Institut de Recerca en Energia de Catalunya) ;
Du, Ruifeng (Institut de Recerca en Energia de Catalunya) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Xiao, Ke (Universitat de Barcelona. Departament d'Enginyeria Electrònica i Biomèdica) ;
Yang, Dawei (Institut de Recerca en Energia de Catalunya) ;
Zhang, Chaoyue (Institut de Recerca en Energia de Catalunya) ;
Li, Canhuang (Universitat de Barcelona. Departament de Química) ;
Zeng, Guifang (Universitat de Barcelona. Departament de Física) ;
Chang, Xingqi (Universitat de Barcelona. Departament de Química) ;
He, Ren (Universitat de Barcelona. Departament de Física) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Li, Junshan (Chengdu University) ;
Jacas Biendicho, Jordi (Institut de Recerca en Energia de Catalunya) ;
Cabot, Andreu (Institut de Recerca en Energia de Catalunya)
Lithium-sulfur batteries (LSBs) with high energy density have the potential to replace current commercial lithium-ion batteries. However, the shuttle effect and the low conversion kinetics of lithium polysulfide (LiPS) remain the main challenges in the development of LSBs. [...]
2023 - 10.3390/en16124545
Energies, Vol. 16, Issue 12 (June 2023) , art. 4545
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3.
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11 p, 11.1 MB |
Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
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Khan, Sabbir A. (Danish Fundamental Metrology) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Olsteins, Dags (University of Copenhagen) ;
Lampadaris, Charalampos (University of Copenhagen) ;
Carrad, Damon James (Technical University of Denmark) ;
Liu, Yu (University of Copenhagen) ;
Quiñones, Judith (Institut Català de Nanociència i Nanotecnologia) ;
Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ;
Sand Jespersen, Thomas (Technical University of Denmark) ;
Krogstrup, Peter (University of Copenhagen) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality and crystal structure flexibility facilitate unique heterostructure growth and efficient material optimization, crucial prerequisites for accurately constructing complex multicomponent quantum materials. [...]
2023 - 10.1021/acsnano.3c02733
ACS nano, Vol. 17, Issue 12 (June 2023) , p. 11794-11804
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4.
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9 p, 8.4 MB |
Electrochemical Stability of Rhodium-Platinum Core-Shell Nanoparticles : An Identical Location Scanning Transmission Electron Microscopy Study
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Vega-Paredes, Miquel (Max-Planck-Institut für Eisenforschung GmbH) ;
Aymerich-Armengol, Raquel (Max-Planck-Institut für Eisenforschung GmbH) ;
Arenas Esteban, Daniel (University of Antwerp) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Bals, Sara (University of Antwerp) ;
Scheu, Christina (Max-Planck-Institut für Eisenforschung GmbH) ;
Garzón Manjón, Alba (Max-Planck-Institut für Eisenforschung GmbH)
Rhodium-platinum core-shell nanoparticles on a carbon support (Rh@Pt/C NPs) are promising candidates as anode catalysts for polymer electrolyte membrane fuel cells. However, their electrochemical stability needs to be further explored for successful application in commercial fuel cells. [...]
2023 - 10.1021/acsnano.3c04039
ACS nano, Vol. 17, Issue 17 (September 2023) , p. 16943-16951
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5.
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24 p, 1.1 MB |
High magnetic coercivity in nanostructured Mn3O4 thin films obtained by chemical vapor deposition
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Bigiani, Lorenzo (Università degli studi di Padova. Dipartimento di Scienze Chimiche) ;
Hassan, Mariam (Università Politecnica delle Marche. Dipartimento di Scienze della Materia e Ingegneria, Ambiente e Urbanistica) ;
Peddis, Davide (Consiglio nazionale delle ricerche. Istituto di Struttura della Materia) ;
Maccato, Chiara (Università degli studi di Padova. Dipartimento di Scienze Chimiche) ;
Varvaro, Gaspare (Consiglio nazionale delle ricerche. Istituto di Struttura della Materia) ;
Sada, Cinzia (Università degli studi di Padova. Dipartimento di Fisica e Astronomia) ;
Bontempi, Elza (Università degli Studi di Brescia. Dipartimento di Ingegneria Meccanica e Industriale) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Barreca, Davide (Università degli studi di Padova. Dipartimento di Scienze Chimiche)
Nanostructured α-MnO (haussmannite) thin films consisting of evenly interconnected nanoaggregates were prepared on Si(100) substrates by chemical vapor deposition from a Mn(II) diketonate-diamine precursor under different reaction atmospheres (dry vs wet O) and total operating pressures. [...]
2019 - 10.1021/acsanm.9b00141
ACS applied nano materials, Vol. 2, issue 3 (March 2019) , p. 1704-1712
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6.
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12 p, 7.5 MB |
Enhancement of proximity-induced superconductivity in a planar Ge hole gas
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Aggarwal, Kushagra (Institute of Science and Technology Austria) ;
Hofmann, Andrea (Institute of Science and Technology Austria) ;
Jirovec, D (Institute of Science and Technology Austria) ;
Prieto, Ivan (Institute of Science and Technology Austria) ;
Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ;
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Veldhorst, Menno (QuTech and Kavli Institute of Nanoscience) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Scappucci, Giordano (QuTech and Kavli Institute of Nanoscience) ;
Danon, Jeroen (Norwegian University of Science and Technology. Department of Physics) ;
Katsaros, Georgios (Institute of Science and Technology Austria)
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. [...]
2021 - 10.1103/PhysRevResearch.3.L022005
Physical Review Research, Vol. 3, issue 2 (April-June 2021) , art. L022005
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7.
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10 p, 3.2 MB |
Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures
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Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Oksenberg, Eitan (Weizmann Institute of Science (Israel). Department of Molecular Chemistry and Materials Science) ;
Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ;
Borja, Carla (Institut Català de Nanociència i Nanotecnologia) ;
Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ;
Di Giulio, Valerio (Institut de Ciències Fotòniques) ;
Ramasse, Quentin (University of Leeds. School of Chemical and Process Engineering) ;
García de Abajo, F. Javier (Institució Catalana de Recerca i Estudis Avançats) ;
Joselevich, Ernesto (Weizmann Institute of Science (Israel). Department of Molecular Chemistry and Materials Science) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-AlO substrates. [...]
2022 - 10.1038/s41467-022-31778-3
Nature communications, Vol. 13 (2022) , art. 4089
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8.
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10 p, 4.7 MB |
Rotated domains in selective area epitaxy grown ZnP : formation mechanism and functionality
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Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ;
Escobar Steinvall, Simon (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Dzade, Nelson Y. (Pennsylvania State University. Department of Energy and Mineral Engineering) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Torres-Vila, Pol (Institut Català de Nanociència i Nanotecnologia) ;
Stutz, Elias Z. (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Zamani, Mahdi (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Paul, Rajrupa (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Leran, Jean-Baptiste (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Zinc phosphide (ZnP) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. [...]
2021 - 10.1039/d1nr06190a
Nanoscale, Vol. 13, Issue 44 (November 2021) , p. 18441-18450
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9.
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256 p, 9.1 MB |
Growth mechanisms and properties of semiconductor nanowires at the atomic scale : From VLS to SAG quantum networks
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Martí-Sánchez, Sara ;
Arbiol i Cobos, Jordi, dir. ;
Sort Viñas, Jordi, dir.
Els nanofils de semiconductors binaris i els seus aliatges tenen característiques per superar les tecnologies convencionals basades en semiconductors ja que presenten propietats millorades comparades amb els seus equivalents macro o microscopics. [...]
Los nanohilos de semiconductores binarios i sus aleaciones tienen características para superar las tecnologías convencionales basadas en semiconductores ya que presentan propiedades mejoradas en comparación con sus equivalentes macro o microscópicos. [...]
Nanowires based on binary semiconductors and their alloys have a great potential to overcome conventional semiconductor technologies. They present enhanced properties with respect to their bulk counterparts, which goes accompanied with a reduction of materials consumption and higher efficiencies. [...]
2020
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10.
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8 p, 1.5 MB |
3D ordering at the liquid-solid polar interface of nanowires
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Zamani, Mahdi (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Imbalzano, Giulio (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ;
Tappy, Nicolas (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Alexander, Duncan T. L. (École Polytechnique Fédérale de Lausanne. Institute of Physics) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Ramasse, Quentin (University of Leeds. School of Physics and Astronomy) ;
Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ;
Bienvenue, Sebastien (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ;
Hébert, Cécile (École Polytechnique Fédérale de Lausanne. Institute of Physics) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Ceriotti, Michele (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ;
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials)
The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid-solid interface. [...]
2020 - 10.1002/adma.202001030
Advanced materials, Vol. 32, issue 38 (Sep. 2020) , art. 2001030
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