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1.
4 p, 378.3 KB Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy / Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Blüm, M. C. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sadewasser, S. (Hahn-Meitner-Institut (Berlin, Alemanya)) ; American Physical Society
Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. [...]
2002 - 10.1063/1.1519357
Applied physics letters, Vol. 81, Issue 19 (October 2002) , p. 3615-3617  
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2.
4 p, 332.8 KB Integrated tunneling sensor for nanoelectromechanical systems / Sadewasser, Sascha (Institut de Microelectrònica de Barcelona) ; Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dohn, S. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Fonseca Chácharo, Luis Antonio (Institut de Microelectrònica de Barcelona) ; Esteve, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1nm is essential, requiring the use of structures with a mobile electrode. [...]
2006 - 10.1063/1.2362593
Applied physics letters, Vol. 89, Issue 17 (October 2006) , p. 173101/1-173101/3  
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