Depósito Digital de Documentos de la UAB Encontrados 10 registros  La búsqueda tardó 0.00 segundos. 
1.
18 p, 2.1 MB Stoichiometry modulates the optoelectronic functionality of zinc phosphide (Zn3−xP2+x) / Stutz, Elias Z. (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Ramanandan, Santhanu P. (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Flór, Mischa (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Paul, Rajrupa (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Zamani, Mahdi (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Escobar Steinvall, Simon (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Sandoval Salaiza, Diego Armando (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Xifra Montesinos, Clàudia (Institut Català de Nanociència i Nanotecnologia) ; Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ; Leran, Jean-Baptiste (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Litvinchuk, Alexander P. (University of Houston. Department of Physics) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Dimitrievska, Mirjana (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials)
Predictive synthesis-structure-property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the performance of devices based on these materials. [...]
2022 - 10.1039/d2fd00055e
Faraday Discussions, Vol. 239 (Oct. 2022) , p. 202-218  
2.
10 p, 4.7 MB Rotated domains in selective area epitaxy grown ZnP : formation mechanism and functionality / Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ; Escobar Steinvall, Simon (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Dzade, Nelson Y. (Pennsylvania State University. Department of Energy and Mineral Engineering) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Torres-Vila, Pol (Institut Català de Nanociència i Nanotecnologia) ; Stutz, Elias Z. (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Zamani, Mahdi (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Paul, Rajrupa (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Leran, Jean-Baptiste (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Zinc phosphide (ZnP) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. [...]
2021 - 10.1039/d1nr06190a
Nanoscale, Vol. 13, Issue 44 (November 2021) , p. 18441-18450  
3.
8 p, 1.5 MB 3D ordering at the liquid-solid polar interface of nanowires / Zamani, Mahdi (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Imbalzano, Giulio (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Tappy, Nicolas (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Alexander, Duncan T. L. (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Ramasse, Quentin (University of Leeds. School of Physics and Astronomy) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Bienvenue, Sebastien (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Hébert, Cécile (École Polytechnique Fédérale de Lausanne. Institute of Physics) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Ceriotti, Michele (École Polytechnique Fédérale de Lausanne. Laboratory of Computational Science and Modeling) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials)
The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid-solid interface. [...]
2020 - 10.1002/adma.202001030
Advanced materials, Vol. 32, issue 38 (Sep. 2020) , art. 2001030  
4.
10 p, 3.8 MB GaAs nanoscale membranes : prospects for seamless integration of III-Vs on silicon / Raya, Andrés M. (Instituto de Micro y Nanotecnología) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Dubrovskii, Vladimir G. (ITMO University) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Alén, Benito (Instituto de Micro y Nanotecnología) ; Morgan, Nicholas (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Ramasse, Quentin (University of Leeds. School of Physics) ; Fuster, David (Instituto de Micro y Nanotecnología) ; Llorens, José M. (Instituto de Micro y Nanotecnología) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Institute of Physics)
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. [...]
2020 - 10.1039/c9nr08453c
Nanoscale, Vol. 12, issue 2 (2020) , p. 815-824  
5.
9 p, 1.2 MB Segregation scheme of indium in AlGaInAs nanowire shells / Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Di Russo, Enrico (Université de Rouen) ; Escobar Steinvall, Simon (École Polytechnique Fédérale de Lausanne) ; Segura Ruiz, Jaime (European Synchrotron Radiation Facility) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Rigutti, Lorenzo (Université de Rouen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Quaternary alloys enable the independent optimization of different semiconductor properties, such as the separate tuning of the band gap and the lattice constant. Nanowire core-shell structures should allow a larger range of compositional tuning as strain can be accommodated in a more effective manner than in thin films. [...]
2019 - 10.1103/PhysRevMaterials.3.023001
Physical review materials, Vol. 3, Issue 2 (February 2019) , art. 23001  
6.
8 p, 4.8 MB III-V Integration on Si(100) : Vertical Nanospades / Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Garcia, Oscar (Universitat Politècnica de Catalunya) ; Boscardin, Mégane (École Polytechnique Fédérale de Lausanne) ; Vindice, David (École Polytechnique Fédérale de Lausanne) ; Tappy, Nicolas (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Balgarkashi, Akshay (École Polytechnique Fédérale de Lausanne) ; Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
III-V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. [...]
2019 - 10.1021/acsnano.9b01546
ACS nano, Vol. 13, Issue 5 (May 2019) , p. 5833-5840  
7.
22 p, 2.5 MB Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality / Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Markov, Edoardo. (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ; Dubrovskii, Vladimir G. (ITMO University) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. [...]
2018 - 10.1039/c8nr05787g
Nanoscale, Vol. 10, Issue 36 (September 2018) , p. 17080-17091  
8.
13 p, 8.2 MB The Role of polarity in nonplanar semiconductor nanostructures / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Zamani, Reza (École Polytechnique Fédérale de Lausanne. Interdisciplinary Center for Electron Microscopy) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (University of Bremen. Institut für Festkörperphysik) ; Xiong, Qihua (Nanyang Technological University. School of Physical and Mathematical Sciences) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne) ; Caroff, Philippe (Delft University of Technology) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e. [...]
2019 - 10.1021/acs.nanolett.9b00459
Nano letters, Vol. 19, issue 6 (June 2019) , p. 3396-3408  
9.
22 p, 841.0 KB Template-Assisted Scalable Nanowire Networks / Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Cerveny, Kris (University of Basel. Department of Physics) ; Weigele, Pirmin (University of Basel. Department of Physics) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Huang, Chunyi (Northwestern University. Department of Materials Science and Engineering) ; Patlatiuk, Taras (University of Basel. Department of Physics) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Sun, Zhiyuan (Northwestern University. Department of Materials Science and Engineering) ; Hill, Megan O. (Northwestern University. Department of Materials Science and Engineering) ; Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Dubrovskii, Vladimir G. (ITMO University) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Lauhon, Lincoln J. (Northwestern University. Department of Materials Science and Engineering) ; Zumbühl, Dominik M. (University of Basel. Department of Physics) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. [...]
2018 - 10.1021/acs.nanolett.8b00554
Nano letters, Vol. 18, Issue 4 (April 2018) , p. 2666-2671
2 documentos
10.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  

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