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7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M.R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  

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