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Depósito Digital de Documentos de la UAB Encontrados 12 registros  1 - 10siguiente  ir al registro: La búsqueda tardó 0.00 segundos. 
1.
10 p, 5.6 MB Experimental Demonstration of a Magnetically Induced Warping Transition in a Topological Insulator Mediated by Rare-Earth Surface Dopants / Muñiz Cano, Beatriz (IMDEA Nanociencia) ; Ferreiros, Yago (IMDEA Nanociencia) ; Pantaleón, Pierre A. (IMDEA Nanociencia) ; Dai, Ji (ALBA Laboratori de Llum de Sincrotró) ; Tallarida, Massimo (ALBA Laboratori de Llum de Sincrotró) ; Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ; Marinova, Vera (Institute of Optical Materials and Technologies Acad. G. Bontchev) ; García-Díez, Kevin (Institut Català de Nanociència i Nanotecnologia) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Miranda, Rodolfo (Universidad Autónoma de Madrid) ; Camarero, Julio (Universidad Autónoma de Madrid. Departamento de Física de la Materia Condensada) ; Guinea, Francisco (IMDEA Nanociencia) ; Silva-Guillén, Jose Angel (IMDEA Nanociencia) ; Valbuena, Miguel Ángel (IMDEA Nanociencia)
Magnetic topological insulators constitute a novel class of materials whose topological surface states (TSSs) coexist with long-range ferromagnetic order, eventually breaking time-reversal symmetry. The subsequent bandgap opening is predicted to co-occur with a distortion of the TSS warped shape from hexagonal to trigonal. [...]
2023 - 10.1021/acs.nanolett.3c00587
Nano letters, Vol. 23, Issue 13 (July 2023) , p. 6249-6258  
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2.
12 p, 3.5 MB Magnetic order in 3D topological insulators-Wishful thinking or gateway to emergent quantumeffects? / Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ; Hesjedal, Thorsten (University of Oxford. Department of Physics) ; Steinke, Nina-Juliane (Institut Laue-Langevin)
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counterpropagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. [...]
2020 - 10.1063/5.0027987
Applied physics letters, Vol. 117, issue 15 (Oct. 2020) , art. 150502  
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3.
6 p, 1.2 MB Electrical control of spin-polarized topological currents in monolayer WTe2 / Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; You, Jinxuan (Universitat Autònoma de Barcelona. Departament de Física) ; García-Mota, Mónica (Simune Atomistics S.L.) ; Koval, Peter (Simune Atomistics S.L.) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Cuadrado, Ramón (Institut Català de Nanociència i Nanotecnologia) ; Verstraete, Matthieu J. (Université de Liège. Complex and Entangled Systems from Atoms to Materials) ; Zanolli, Zeila (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. [...]
2022 - 10.1103/PhysRevB.106.L161410
Physical review B, Vol. 106, issue 16 (Oct. 2022) , art. L161410  
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4.
10 p, 15.3 MB Tuning the topological band gap of bismuthene with silicon-based substrates / Wittemeier, Nils (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Zanolli, Zeila (Utrecht University. Chemistry Department)
Some metastable polymorphs of bismuth monolayers (bismuthene) can host non-trivial topological phases. However, it remains unclear whether these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. [...]
2022 - 10.1088/2515-7639/ac84ad
JPhys materials, Vol. 5, issue 3 (July. 2022) , art. 35002  
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5.
7 p, 5.2 MB Valley Hall effect and nonlocal resistance in locally gapped graphene / Aktor, Thomas (Technical University of Denmark. Center for Nanostructured Graphene) ; Garcia, José H (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Technical University of Denmark. Center for Nanostructured Graphene) ; Power, Stephen R. (Trinity College Dublin. School of Physics)
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by nonlocal resistance (RNL) fingerprints. [...]
2021 - 10.1103/PhysRevB.103.115406
Physical review B, Vol. 103, issue 11 (March 2021) , art. 115406  
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6.
12 p, 2.3 MB Multiple quantum phases in graphene with enhanced spin-orbit coupling : from the quantum spin hall regime to the spin hall effect and a robust metallic state / Cresti, Alessandro (IMEP-LAHC) ; Dinh, Van Tuan (Universitat Autònoma de Barcelona. Departament de Física) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. [...]
2014 - 10.1103/PhysRevLett.113.246603
Physical review letters, Vol. 113, issue 24 (Dec. 2014) , art. 246603  
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7.
14 p, 1.8 MB Towards microscopic control of the magnetic exchange coupling at the surface of a topological insulator / Rüssmann, Philipp (Peter Grünberg Institut) ; Mahatha, Sanjoy K. (Aarhus University. Department of Physics and Astronomy) ; Sessi, Paolo (Universität Würzburg) ; Valbuena, Miguel Ángel (Institut Català de Nanociència i Nanotecnologia) ; Bathon, Thomas (Universität Würzburg) ; Fauth, Kai (Universität Würzburg) ; Godey, Sylvie (Institut Català de Nanociència i Nanotecnologia) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Kokh, Konstantin A. (Novosibirsk State University) ; Tereshchenko, Oleg E. (Novosibirsk State University) ; Gargiani, Pierluigi (ALBA Laboratori de Llum de Sincrotró) ; Valvidares, Manuel (ALBA Laboratori de Llum de Sincrotró) ; Jiménez, Erika (European Synchrotron Radiation Facility) ; Brookes, N. B (European Synchrotron Radiation Facility) ; Bode, Matthias (Universität Würzburg) ; Bihlmayer, G (Peter Grünberg Institut) ; Blügel, Stefan (Peter Grünberg Institut) ; Mavropoulos, Phivos (Peter Grünberg Institut) ; Carbone, Carlo (Istituto di Struttura della Materia) ; Barla, Alessandro (Istituto di Struttura della Materia)
Magnetically doped topological insulators may produce novel states of electronic matter, where for instance the quantum anomalous Hall effect state can be realized. Pivotal to this goal is a microscopic control over the magnetic state, defined by the local electronic structure of the dopants and their interactions. [...]
2018 - 10.1088/2515-7639/aad02a
JPhys materials, Vol. 1, Núm. 1 (September 2018) , art. 015002  
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8.
11 p, 1.9 MB Quantum Hall effect in graphene with interface-induced spin-orbit coupling / Cysne, Tarik P. (Universidade Federal Do Rio de Janeiro) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Reily Rocha, Alexandre (Universidade Estadual Paulista (Brasil)) ; Rappoport, Tatiana G. (Universidade Federal Do Rio de Janeiro)
We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). [...]
2018 - 10.1103/PhysRevB.97.085413
Physical review B, Vol. 97, Issue 8 (February 2018) , art. 85413  
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9.
8 p, 761.1 KB Scale-invariant large nonlocality in polycrystalline graphene / Ribeiro, Mário (Nanogune) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Hueso, Luis E. (Nanogune) ; Casanova, Fèlix (Nanogune)
The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. [...]
2017 - 10.1038/s41467-017-02346-x
Nature communications, Vol. 8, issue 1 (Jan. 2017) , art. 2198  
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10.
7 p, 4.6 MB Valley-polarized quantum transport generated by gauge fields in graphene / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. [...]
2017 - 10.1088/2053-1583/aa7cbd
2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006  
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Depósito Digital de Documentos de la UAB : Encontrados 12 registros   1 - 10siguiente  ir al registro:
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