Depósito Digital de Documentos de la UAB Encontrados 35 registros  1 - 10siguientefinal  ir al registro: La búsqueda tardó 0.01 segundos. 
1.
9 p, 9.5 MB Elastic Properties of Few Nanometers Thick Polycrystalline MoS2 Membranes : A Nondestructive Study / Graczykowski, Bartlomiej (Max Planck Institute for Polymer Research) ; Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Saleta Reig, David (Institut Català de Nanociència i Nanotecnologia) ; Kasprzak, M. (Adam Mickiewicz University in Poznan) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
The performance gain-oriented nanostructurization has opened a new pathway for tuning mechanical features of solid matter vital for application and maintained performance. Simultaneously, the mechanical evaluation has been pushed down to dimensions way below 1 μm. [...]
2017 - 10.1021/acs.nanolett.7b03669
Nano letters, Vol. 17, Issue 12 (December 2017) , p. 7647-7651  
2.
21 p, 2.0 MB Field Effect in Graphene-Based van der Waals Heterostructures : Stacking Sequence Matters / Stradi, Daniele (QuantumWise A/S) ; Papior, Nick (Institut Català de Nanociència i Nanotecnologia) ; Hansen, O. (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology)
Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. [...]
2017 - 10.1021/acs.nanolett.7b00473
Nano letters, Vol. 17, Issue 4 (April 2017) , p. 2660-2666  
3.
8 p, 2.9 MB Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene / Jia, Xiaoyu (University of Mainz) ; Hu, Min (University of Science and Technology of China) ; Soundarapandian, Karuppasamy (ICFO-Institut de Ciències Fotòniques) ; Yu, Xiaoqing (Max Planck Institute for Polymer Research) ; Liu, Zhaoyang (Max Planck Institute for Polymer Research) ; Chen, Zongping (Max Planck Institute for Polymer Research) ; Narita, Akimitsu (Max Planck Institute for Polymer Research) ; Müllen, Klaus (Max Planck Institute for Polymer Research) ; Koppens, Frank H.L. (ICFO-Institut de Ciències Fotòniques) ; Jiang, Jun (University of Science and Technology of China) ; Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia) ; Bonn, Mischa (Max Planck Institute for Polymer Research) ; Wang, Hai I. (Max Planck Institute for Polymer Research)
Due to its outstanding electrical properties and chemical stability, graphene finds widespread use in various electrochemical applications. Although the presence of electrolytes strongly affects its electrical conductivity, the underlying mechanism has remained elusive. [...]
2019 - 10.1021/acs.nanolett.9b04053
Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9029-9036  
4.
12 p, 1.6 MB Spin Proximity Effects in Graphene/Topological Insulator Heterostructures / Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (QuantaLab and International Iberian Nanotechnology Laboratory) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. [...]
2018 - 10.1021/acs.nanolett.7b05482
Nano letters, Vol. 18, Issue 3 (March 2018) , p. 2033-2039  
5.
45 p, 1.3 MB Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth / Aseev, Pavel (Microsoft Quantum Lab Delft) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Singh, Amrita (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Stek, Lieuwe J. (Delft University of Technology) ; Bordin, Alberto (Delft University of Technology) ; Watson, John D. (Microsoft Quantum Lab Delft) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Abel, Daniel (Microsoft Quantum Lab Delft) ; Gamble, John (Microsoft Quantum) ; Van Hoogdalem, Kevin (Microsoft Quantum Lab Delft) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Kouwenhoven, Leo P. (Delft University of Technology) ; De Lange, Gijs (Microsoft Quantum Lab Delft) ; Caroff, Philippe (Microsoft Quantum Lab Delft)
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. [...]
2019 - 10.1021/acs.nanolett.9b04265
Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9102-9111  
6.
Ferroelectric Domain Walls in PbTiO3 Are Effective Regulators of Heat Flow at Room Temperature / Langenberg, Eric (Universidade de Santiago de Compostela. Departmento de Química-Física) ; Saha, Dipanjan (Carnegie Mellon University. Mechanical Engineering Department) ; Holtz, Megan E. (Cornell University) ; Wang, Jian-Jun (Pennsylvania State University. Department of Materials Science and Engineering) ; Bugallo, David (Universidade de Santiago de Compostela. Departmento de Química-Física) ; Ferreiro Vila, Elias (Universidade de Santiago de Compostela. Departmento de Química-Física) ; Paik, Hanjong (Cornell University. Department of Materials Science and Engineering) ; Hanke, Isabelle (Leibniz-Institut für Kristallzüchtung) ; Ganschow, Steffen (Leibniz-Institut für Kristallzüchtung) ; Muller, David A. (Cornell University) ; Chen, Long-Qing (Pennsylvania State University. Department of Materials Science and Engineering) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ; Malen, Jonathan (Carnegie Mellon University. Mechanical Engineering Department) ; Schlom, Darrell G. (Kavli Institute at Cornell for Nanoscale Science) ; Rivadulla, Francisco (Universidade de Santiago de Compostela. Departmento de Química-Física)
Achieving efficient spatial modulation of phonon transmission is an essential step on the path to phononic circuits using "phonon currents". With their intrinsic and reconfigurable interfaces, domain walls (DWs), ferroelectrics are alluring candidates to be harnessed as dynamic heat modulators. [...]
2019 - 10.1021/acs.nanolett.9b02991
Nano letters, Vol. 19, Issue 11 (November 2019) , p. 7901-7907  
7.
27 p, 5.7 MB Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction / Castilla, Sebastián (ICFO-Institut de Ciències Fotòniques) ; Terrés, Bernat (ICFO-Institut de Ciències Fotòniques) ; Autore, Marta (CIC NanoGUNE) ; Viti, Leonardo (Istituto Nanoscienze and Scuola Normale Superiore) ; Li, Jian (Nanjing University) ; Nikitin, Alexey Y. (IKERBASQUE) ; Vangelidis, Ioannis (University of Ioannina. Department of Materials Science and Engineering) ; Watanabe, Kenji (National Institute for Material Science (Tsukuba, Japan)) ; Taniguchi, Takashi (National Institute for Material Science (Tsukuba, Japan)) ; Lidorikis, Elefterios (University of Ioannina. Department of Materials Science and Engineering) ; Vitiello, Miriam S. (Istituto Nanoscienze and Scuola Normale Superiore) ; Hillenbrand, Rainer (IKERBASQUE) ; Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia) ; Koppens, Frank H.L. (ICFO-Institut de Ciències Fotòniques)
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. [...]
2019 - 10.1021/acs.nanolett.8b04171
Nano letters, Vol. 19, Issue 5 (May 2019) , p. 2765-2773  
8.
28 p, 1.9 MB Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max Planck Institute of Microstructure Physics) ; Senz, S. (Max Planck Institute of Microstructure Physics) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Moutanabbir, Oussama (École Polytechnique de Montréal. Department of Engineering Physics)
Nanowires are a versatile platform to investigate and harness phonon and thermal transport phenomena in nanoscale systems. With this perspective, we demonstrate herein the use of crystal phase and mass disorder as effective degrees of freedom to manipulate the behavior of phonons and control the flow of local heat in silicon nanowires. [...]
2018 - 10.1021/acs.nanolett.8b00612
Nano letters, Vol. 18, Issue 5 (May 2018) , p. 3066-3075  
9.
13 p, 8.2 MB The Role of polarity in nonplanar semiconductor nanostructures / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Zamani, Reza (École Polytechnique Fédérale de Lausanne. Interdisciplinary Center for Electron Microscopy) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (University of Bremen. Institut für Festkörperphysik) ; Xiong, Qihua (Nanyang Technological University. School of Physical and Mathematical Sciences) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne) ; Caroff, Philippe (Delft University of Technology) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e. [...]
2019 - 10.1021/acs.nanolett.9b00459
Nano letters, Vol. 19, issue 6 (June 2019) , p. 3396-3408  
10.
16 p, 836.4 KB Coexistence of elastic modulations in the charge density wave state of 2H-NbSe₂ / Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ; Rubio Verdú, Carmen (CIC NanoGUNE700) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Zaldívar, Javier (CIC NanoGUNE) ; Dreher, Paul (Donostia International Physics Center) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Silva Guillén, José Ángel (Wuhan University. School of Physics and Technology) ; Choi, Deung-Jang (Donostia International Physics Center) ; Pascual, José I. (CIC NanoGUNE) ; Ugeda, Miguel M. (CIC NanoGUNE) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona)
Bulk and single-layer 2H-NbSe₂ exhibit identical charge density wave order (CDW) with a quasi-commensurate 3 × 3 superlattice periodicity. Here we combine scanning tunnelling microscopy (STM) imaging at T = 1 K of 2H-NbSe₂ with first-principles density functional theory (DFT) calculations to investigate the structural atomic rearrangement of this CDW phase. [...]
2019 - 10.1021/acs.nanolett.9b00268
Nano letters, Vol. 19, issue 5 (May 2019) , p. 3027-3032  

Depósito Digital de Documentos de la UAB : Encontrados 35 registros   1 - 10siguientefinal  ir al registro:
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