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37 p, 2.3 MB |
Disentangling phonon channels in nanoscale heat transport
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Mukherjee, Samik (École Polytechnique de Montréal. Département de génie physique) ;
Wajs, Marcin (École Polytechnique de Montréal. Département de génie physique) ;
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ;
Givan, Uri (Max Planck Institute of Microstructure Physics) ;
Senz, Stephan (Max Planck Institute of Microstructure Physics) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Francoeur, Sebastien (École Polytechnique de Montréal. Département de génie physique) ;
Moutanabbir, Oussama (École Polytechnique de Montréal. Département de génie physique)
Phonon surface scattering has been at the core of heat transport engineering in nanoscale devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a critical, size-dependent temperature. [...]
2021 -  10.1103/PhysRevB.104.075429
Physical review B, Vol. 104, issue 7 (August 2021) , art. 75429
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2.
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7 p, 1.1 MB |
Giant valley-polarized spin splittings in magnetized Janus Pt dichalcogenides
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Sattar, Shahid (Linnaeus University. Department of Physics and Electrical Engineering) ;
Larsson, J. Andreas (Luleå University of Technology. Department of Engineering Sciences and Mathematics) ;
Canali, C.M. (Linnaeus University. Department of Physics and Electrical Engineering) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia)
We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K' valleys in the conduction bands. [...]
2022 - 10.1103/PhysRevB.105.L041402
Physical review B, Vol. 105, issue 4 (Jan. 2022) , art. A100
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3.
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6 p, 1.2 MB |
Electrical control of spin-polarized topological currents in monolayer WTe2
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Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
You, Jinxuan (Universitat Autònoma de Barcelona. Departament de Física) ;
García-Mota, Mónica (Simune Atomistics S.L.) ;
Koval, Peter (Simune Atomistics S.L.) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Cuadrado, Ramón (Institut Català de Nanociència i Nanotecnologia) ;
Verstraete, Matthieu J. (Université de Liège. Complex and Entangled Systems from Atoms to Materials) ;
Zanolli, Zeila (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. [...]
2022 - 10.1103/PhysRevB.106.L161410
Physical review B, Vol. 106, issue 16 (Oct. 2022) , art. L161410
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4.
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30 p, 3.1 MB |
Origin of large negative electrocaloric effect in antiferroelectric PbZr O3
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Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Faye, Romain (Luxembourg Institute of Science and Technology. Materials Research and Technology Department) ;
Vellvehi, Miquel (Institut de Microelectrònica de Barcelona) ;
Nouchokgwe, Youri (University of Luxembourg) ;
Perpiñà Giribet, Xavier (Institut de Microelectrònica de Barcelona) ;
Caicedo Roque, Jose Manuel (Institut Català de Nanociència i Nanotecnologia) ;
Jordà, Xavier (Institut de Microelectrònica de Barcelona) ;
Roleder, Krystian (University of Silesia in Katowice. Institute of Physics) ;
Kajewski, Dariusz (University of Silesia in Katowice. Institute of Physics) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Defay, Emmanuel (Luxembourg Institute of Science and Technology. Materials Research and Technology Department) ;
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. [...]
2021 - 10.1103/PhysRevB.103.054112
Physical review B, Vol. 103 Núm. 5 (Feb. 2021) , art. 54112
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5.
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7 p, 5.2 MB |
Valley Hall effect and nonlocal resistance in locally gapped graphene
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Aktor, Thomas (Technical University of Denmark. Center for Nanostructured Graphene) ;
Garcia, José H (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Jauho, Antti-Pekka (Technical University of Denmark. Center for Nanostructured Graphene) ;
Power, Stephen R. (Trinity College Dublin. School of Physics)
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by nonlocal resistance (RNL) fingerprints. [...]
2021 - 10.1103/PhysRevB.103.115406
Physical review B, Vol. 103, issue 11 (March 2021) , art. 115406
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6.
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18 p, 7.5 MB |
Graphene on two-dimensional hexagonal BN, AlN, and GaN : electronic, spin-orbit, and spin relaxation properties
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Zollner, Klaus (University of Regensburg. Institute for Theoretical Physics) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Fabian, Jaroslav (University of Regensburg. Institute for Theoretical Physics)
We investigate the electronic band structure of graphene on a series of two-dimensional hexagonal nitride insulators hXN, X=B, Al, and Ga, with first-principles calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of the proximitized graphene. [...]
2021 - 10.1103/PhysRevB.103.075129
Physical review B, Vol. 103, issue 7 (Feb. 2021) , art. 75129
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7.
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8.
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6 p, 1.1 MB |
Transport fingerprints at graphene superlattice Dirac points induced by a boron nitride substrate
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Martínez Gordillo, Rafael (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ;
Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia)
We report peculiar transport fingerprints at the secondary Dirac points created by the interaction between graphene and boron nitride layers. By performing ab initio calculations, the electronic characteristics of the moiré patterns produced by the interaction between layers are first shown to be in good agreement with experimental data, and further used to calibrate the tight-binding model implemented for the transport study. [...]
2014 - 10.1103/PhysRevB.89.161401
Physical review B : Condensed matter and materials physics, Vol. 89, issue 16 (April 2014) , art. 161401
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10.
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6 p, 979.5 KB |
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
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Lafont, F. (Laboratoire National de Métrologie et d'Essais) ;
Ribeiro-Palau, Rebeca (Laboratoire National de Métrologie et d'Essais) ;
Han, Z. (Institut polytechnique de Grenoble. Institut Néel) ;
Cresti, Alessandro (Institut polytechnique de Grenoble. Institute of Microelectronics, Electromagnetism and Photonics) ;
Delvallée, Alexandra (Laboratoire National de Métrologie et d'Essais) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Bouchiat, Vincent (Institut polytechnique de Grenoble. Institut Néel) ;
Ducourtieux, Sebastien (Laboratoire National de Métrologie et d'Essais) ;
Schopfer, F. (Laboratoire National de Métrologie et d'Essais) ;
Poirier, W. (Laboratoire National de Métrologie et d'Essais)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. [...]
2014 - 10.1103/PhysRevB.90.115422
Physical review B : Condensed matter and materials physics, Vol. 90, issue 11 (Sep. 2014) , art. 115422
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