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Depósito Digital de Documentos de la UAB Encontrados 40 registros  inicioanterior18 - 27siguientefinal  ir al registro: La búsqueda tardó 0.00 segundos. 
18.
8 p, 3.1 MB 2 × 2 charge density wave in single-layer TiTe₂ / Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
A density functional theory study concerning the origin of the recently reported 2 × 2 charge density wave (CDW) instability in single-layer TiTe₂ is reported. It is shown that, whereas calculations employing the semi-local functional PBE favor the undistorted structure, the hybrid functional HSE06 correctly predicts a 2 × 2 distortion. [...]
2019 - 10.1088/2053-1583/aaf20b
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15027  
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19.
15 p, 790.9 KB Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures / Vincent, Tom (National Physical Laboratory (United Kingdom)) ; Panchal, Vishal (Bruker Nano Surfaces) ; Booth, Timothy J. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Antonov, Vladimir (University of London. Royal Holloway) ; Kazakova, Olga (National Physical Laboratory (United Kingdom))
We use confocal Raman microscopy and a recently proposed vector analysis scheme to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO). [...]
2019 - 10.1088/2053-1583/aaf1dc
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15022  
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20.
11 p, 562.6 KB Spin transport in hydrogenated graphene / Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M. M. (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Gmitra, Martin (University of Regensburg) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Kochan, Denis (University of Regensburg) ; Ortmann, Frank (Technische Universität Dresden) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Fabian, Jaroslav (Universität Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. [...]
2015 - 10.1088/2053-1583/2/2/022002
2D Materials, Vol. 2, Núm. 2 (June 2015) , art. 22002  
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21.
8 p, 505.6 KB Quantum transport in chemically functionalized graphene at high magnetic field : Defect-induced critical states and breakdown of electron-hole symmetry / Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Cresti, Alessandro (Université Grenoble Alpes) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Unconventional magnetotransport fingerprints in the quantum Hall regime (with applied magnetic fields from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0. [...]
2014 - 10.1088/2053-1583/1/2/021001
2D Materials, Vol. 1, Núm. 2 (September 2014) , art. 21001  
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22.
13 p, 2.2 MB Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides / Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ; López Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Cappelluti, Emmanuele (Istituto de Sistemi Complessi) ; Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMDs) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. [...]
2014 - 10.1088/2053-1583/1/3/034003
2D Materials, Vol. 1, Núm. 3 (December 2014) , art. 34003  
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23.
12 p, 8.3 MB Flexible graphene transistors for recording cell action potentials / Blaschke, Benno M. (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Lottner, Martin (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Drieschner, Simon (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Stoiber, Karolina (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Rousseau, Lionel (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Lissourges, Gaëlle (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. [...]
2016 - 10.1088/2053-1583/3/2/025007
2D Materials, Vol. 3, issue 2 (June 2016) , art. 25007  
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24.
11 p, 3.4 MB Electronic structure of 2H-NbSe₂ single-layers in the CDW state / Silva-Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona)
Adensity functional theory study of NbSe₂"Qsingle-layers in the normal non-modulated and the 3xQ3 CDW states is reported. Weshow that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. [...]
2016 - 10.1088/2053-1583/3/3/035028
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35028  
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25.
6 p, 2.6 MB Electroactive graphene nanofluids for fast energy storage / Dubal, Deepak P. (Institut Català de Nanociència i Nanotecnologia) ; Gómez-Romero, Pedro 1959- (Institut Català de Nanociència i Nanotecnologia)
Graphenes have been extensively studied as electrode materials for energy storage in supercapacitors and batteries, but always as solid electrodes. The conception and development of graphene electroactive nanofluids (ENFs) reported here for the first time provides a novel way to 'form' graphene electrodes and demonstrates proof of concept for the use of these liquid electrodes for energy storage in novel flow cells. [...]
2016 - 10.1088/2053-1583/3/3/031004
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 31004  
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26.
7 p, 4.6 MB Valley-polarized quantum transport generated by gauge fields in graphene / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. [...]
2017 - 10.1088/2053-1583/aa7cbd
2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006  
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27.
9 p, 1.1 MB Quantum transport in graphene in presence of strain-induced pseudo-Landau levels / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 - 10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005  
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Depósito Digital de Documentos de la UAB : Encontrados 40 registros   inicioanterior18 - 27siguientefinal  ir al registro:
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