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Depósito Digital de Documentos de la UAB Encontrados 4 registros  La búsqueda tardó 0.00 segundos. 
1.
45 p, 1.3 MB Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth / Aseev, Pavel (Microsoft Quantum Lab Delft) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Singh, Amrita (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Stek, Lieuwe J. (Delft University of Technology) ; Bordin, Alberto (Delft University of Technology) ; Watson, John D. (Microsoft Quantum Lab Delft) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Abel, Daniel (Microsoft Quantum Lab Delft) ; Gamble, John (Microsoft Quantum) ; Van Hoogdalem, Kevin (Microsoft Quantum Lab Delft) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Kouwenhoven, Leo P. (Delft University of Technology) ; De Lange, Gijs (Microsoft Quantum Lab Delft) ; Caroff, Philippe (Microsoft Quantum Lab Delft)
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. [...]
2019 - 10.1021/acs.nanolett.9b04265
Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9102-9111  
Registro completo -
2.
13 p, 8.2 MB The Role of polarity in nonplanar semiconductor nanostructures / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Zamani, Reza (École Polytechnique Fédérale de Lausanne. Interdisciplinary Center for Electron Microscopy) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (University of Bremen. Institut für Festkörperphysik) ; Xiong, Qihua (Nanyang Technological University. School of Physical and Mathematical Sciences) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne) ; Caroff, Philippe (Delft University of Technology) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e. [...]
2019 - 10.1021/acs.nanolett.9b00459
Nano letters, Vol. 19, issue 6 (June 2019) , p. 3396-3408  
Registro completo -
3.
10 p, 8.1 MB Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks / Aseev, Pavel (Delft University of Technology) ; Fursina, Alexandra (Delft University of Technology) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Krizek, Filip (University of Copenhagen) ; Sestoft, Joachim E. (University of Copenhagen) ; Borsoi, Francesco (Delft University of Technology) ; Heedt, Sebastian (Delft University of Technology) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Swoboda, Timm (Institut Català de Nanociència i Nanotecnologia) ; Koops, René (QuTech and Netherlands Organization for Applied Scientific Research) ; Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (University of Copenhagen) ; Kouwenhoven, Leo P. (Delft University of Technology) ; Caroff, Philippe (Delft University of Technology)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. [...]
2019 - 10.1021/acs.nanolett.8b03733
Nano letters, Vol. 19, Issue 1 (January 2019) , p. 218-227  
Registro completo - Creative Commons
4.
32 p, 3.3 MB Twin-induced InSb nanosails : a convenient high mobility quantum system / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Leturcq, Renaud (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ; Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ; Rolland, Chloé (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ; Magen Dominguez, Cesar (Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Caroff, Philippe (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833  
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