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57 p, 12.2 MB |
Genome-Wide Association Studies of Coffee Intake in UK/US Participants of European Ancestry Uncover Gene-Cohort Influences
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Thorpe, Hayley H A (University of Guelph) ;
Fontanillas, Pierre (23andMe, Inc.) ;
Pham, Benjamin K (University of California San Diego La Jolla, CA, USA) ;
Meredith, John J (University of California San Diego) ;
Jennings, Mariela V (University of California San Diego) ;
Courchesne-Krak, Natasia S (University of California San Diego) ;
Vilar-Ribó, L (Hospital Universitari Vall d'Hebron. Institut de Recerca) ;
Bianchi, Sevim B (University of California San Diego) ;
Mutz, Julian (King's College London) ;
Elson, Sarah L (University of Guelph) ;
Khokhar, Jibran Y (University of Guelph) ;
Abdellaoui, Abdel (University of Amsterdam) ;
Davis, Lea K (Vanderbilt University Medical Center) ;
Palmer, Abraham A (University of California San Diego) ;
Sanchez-Roige, Sandra (Vanderbilt University Medical Center) ;
Universitat Autònoma de Barcelona
Coffee is one of the most widely consumed beverages. We performed a genome-wide association study (GWAS) of coffee intake in US-based 23andMe participants (N =130,153) and identified 7 significant loci, with many replicating in three multi-ancestral cohorts. [...]
2023 -  10.1101/2023.09.09.23295284
medRxiv, september 2023
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58 p, 884.9 KB |
Multi-ancestry meta-analysis of tobacco use disorder prioritizes novel candidate risk genes and reveals associations with numerous health outcomes
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Toikumo, Sylvanus (University of Pennsylvania Perelman School of Medicine) ;
Jennings, Mariela V (University of California San Diego) ;
Pham, Benjamin K (University of California San Diego) ;
Lee, Hyunjoon (Massachusetts General Hospital) ;
Mallard, Travis T (Harvard Medical School) ;
Bianchi, Sevim B (University of California San Diego) ;
Meredith, John J (University of California San Diego) ;
Vilar-Ribó, L (Hospital Universitari Vall d'Hebron. Institut de Recerca) ;
Xu, Heng (University of California San Diego) ;
Hatoum, Alexander S (Washington University School of Medicine) ;
Johnson, Emma C (Washington University School of Medicine) ;
Pazdernik, Vanessa (Mayo Clinic) ;
Jinwala, Zeal (University of Pennsylvania Perelman School of Medicine) ;
Pakala, Shreya R (University of California San Diego) ;
Leger, Brittany S (University of California San Diego) ;
Niarchou, Maria (Vanderbilt Genetics Institute) ;
Ehinmowo, Michael (University of Ibadan) ;
Jenkins, Greg D (Mayo Clinic) ;
Batzler, Anthony (Mayo Clinic) ;
Pendegraft, Richard (Mayo Clinic) ;
Palmer, Abraham A (University of California San Diego) ;
Zhou, Hang (Veterans Affairs Connecticut Healthcare System) ;
Biernacka, Joanna M (Mayo Clinic) ;
Coombes, Brandon J (Mayo Clinic) ;
Gelernter, Joel (Veterans Affairs Connecticut Healthcare System) ;
Xu, Ke (Veterans Affairs Connecticut Healthcare System) ;
Hancock, Dana B (RTI International) ;
Cox, Nancy J (Vanderbilt University) ;
Smoller, Jordan W (Harvard Medical School) ;
Davis, Lea K (Vanderbilt University Medical Center) ;
Justice, Amy C (Yale University School of Medicine) ;
Kranzler, Henry R (University of Pennsylvania Perelman School of Medicine) ;
Kember, Rachel L (University of Pennsylvania Perelman School of Medicine) ;
Sanchez-Roige, Sandra (Vanderbilt University) ;
Universitat Autònoma de Barcelona
Tobacco use disorder (TUD) is the most prevalent substance use disorder in the world. Genetic factors influence smoking behaviors, and although strides have been made using genome-wide association studies (GWAS) to identify risk variants, the majority of variants identified have been for nicotine consumption, rather than TUD. [...]
2023 - 10.1101/2023.03.27.23287713
medRxiv, september 2023
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6 p, 1.6 MB |
A study on free-standing 3C-SiC bipolar power diodes
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Li, Fan (University of Warwick. School of Engineering) ;
Renz, Arne Benjamin (University of Warwick. School of Engineering) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Shah, Vishal (University of Warwick. School of Engineering) ;
Gammon, Peter (University of Warwick. School of Engineering) ;
La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ;
Jennings, Mike (Swansea University. College of Engineering) ;
Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 - 10.1063/5.0054433
Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101
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22 p, 4.1 MB |
Status and prospects of cubic silicon carbide power electronics device technology
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Li, Fan (Newport Wafer Fab) ;
Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ;
Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ;
Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ;
La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Evans, Jonathan Edward (Swansea University. Faculty of Science) ;
Fisher, Craig Arthur (Swansea University. Faculty of Science) ;
Monaghan, Finn Alec (Swansea University. Faculty of Science) ;
Mawby, Philip Andrew (The University of Warwick. School of Engineering) ;
Jennings, Mike (Swansea University. Faculty of Science)
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. [...]
2021 - 10.3390/ma14195831
Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831
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26 p, 7.9 MB |
GaO and related ultra-wide bandgap power semiconductor oxides : new energy electronics solutions for CO emission mitigation
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Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Asher, Jacob J. (Swansea University. College of Engineering) ;
Jennings, Mike (Swansea University. College of Engineering) ;
Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Currently, a significant portion (~50%) of global warming emissions, such as CO, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. [...]
2022 - 10.3390/ma15031164
Materials, Vol. 15, issue 3 (Feb. 2022) , art. 1164
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43 p, 1.9 MB |
P-type ultrawide-band-gap spinel ZnGa2O4 : new perspectives for energy electronics
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Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Sartel, Corinne. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Vilar, Christele (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia) ;
Belarre Triviño, Francisco Javier (Institut Català de Nanociència i Nanotecnologia) ;
Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ;
Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ;
Li, Lijie (Swansea University. College of Engineering) ;
Jennings, Mike (Swansea University. College of Engineering) ;
Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
The family of spinel compounds is a large and important class of multifunctional materials of general formulation ABX with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. [...]
2020 - 10.1021/acs.cgd.9b01669
Crystal Growth and Design, Vol. 20 Núm. 4 (April 2020) , p. 2535-2546
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6 p, 657.0 KB |
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating
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Russell, Stephen (University of Warwick. School of Engineering) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ;
Fisher, Craig (University of Warwick. School of Engineering) ;
Hamilton, Dean P. (University of Warwick. School of Engineering) ;
Mawby, Philip A. (University of Warwick. School of Engineering) ;
Jennings, Mike (University of Warwick. School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261
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19 p, 1.0 MB |
P-type β-gallium oxide : a new perspective for power and optoelectronic devices
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Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ;
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ;
Ton-That, C. (University of Technology Sydney) ;
Huynh, Tung Thanh (University of Technology Sydney) ;
Phillips, Matthew (University of Technology Sydney) ;
Russell, Stephen A. O. (University of Warwick) ;
Jennings, M. R. (University of Warwick) ;
Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126
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