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Depósito Digital de Documentos de la UAB Encontrados 23 registros  1 - 10siguientefinal  ir al registro: La búsqueda tardó 0.02 segundos. 
1.
5 p, 1.9 MB Heat transport through a solid-solid junction : The interface as an autonomous thermodynamic system / Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Øivind, Wilhelmsen (SINTEF Energy Research) ; Trinh, Thuat T. (Norwegian University of Science and Technology. Department of Chemistry) ; Bedeaux, Dick (Norwegian University of Science and Technology. Department of Chemistry) ; Kjelstrup, Signe (Norwegian University of Science and Technology. Department of Chemistry)
We perform computational experiments using nonequilibrium molecular dynamics simulations, showing that the interface between two solid materials can be described as an autonomous thermodynamic system. [...]
2016 - 10.1039/c6cp01872f
Physical chemistry chemical physics, Vol. 18, Issue 20 (May 2016) , p. 13741-13745  
2.
9 p, 2.0 MB Impact of pore anisotropy on the thermal conductivity of porous Si nanowires / Ferrando Villalba, Pablo (Universitat Autònoma de Barcelona. Departament de Física) ; D'Ortenzi, L (Istituto Nazionale di Ricerca Metrologica di Torino) ; Dalkiranis, G.G. (Universitat Autònoma de Barcelona. Departament de Física) ; Cara, Eleonora (Istituto Nazionale di Ricerca Metrologica di Torino) ; Lopeandía Fernández, Aitor (Universitat Autònoma de Barcelona. Departament de Física) ; Abad Muñoz, Llibertat (Institut de Ciència de Materials de Barcelona) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; De Leo, N. (Istituto Nazionale di Ricerca Metrologica) ; Saghi, Zineb (Istituto Nazionale di Ricerca Metrologica) ; Jacob, M (University of Grenoble) ; Gambacorti, N. (University of Grenoble) ; Boarino, L. (Istituto Nazionale di Ricerca Metrologica) ; Rodríguez Viejo, Javier, dir. (Universitat Autònoma de Barcelona. Departament de Física)
Porous materials display enhanced scattering mechanisms that greatly infuence their transport properties. Metal-assisted chemical etching (MACE) enables fabrication of porous silicon nanowires starting from a doped Si wafer by using a metal template that catalyzes the etching process. [...]
2018 - 10.1038/s41598-018-30223-0
Scientific Reports, Vol. 8 (2018) , p. 12796  
3.
17 p, 2.0 MB Thermal boundary resistance in semiconductors by non-equilibrium thermodynamics / Dettori, Riccardo (University of Cagliari. Department of Physics) ; Melis, Claudio (University of Cagliari. Department of Physics) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia)
We critically address the problem of predicting the thermal boundary resistance at the interface between two semiconductors by atomistic simulations. After reviewing the available models, lattice dynamics calculations and molecular dynamics simulation protocols, we reformulate this problem in the language of non-equilibrium thermodynamics, providing an elegant, robust and valuable theoretical framework for the direct calculation of the thermal boundary resistance through molecular dynamics simulations. [...]
2016 - 10.1080/23746149.2016.1175317
Advances in Physics: X, Vol. 1, Issue 2 (May 2016) , p. 246-261  
4.
8 p, 743.4 KB Ptsi clustering in silicon probed by transport spectroscopy / Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. [...]
2014 - 10.1103/PhysRevX.3.041025
Physical review X, Vol. 3, issue. 4 (Dec. 2014) , art. e041025  
5.
7 p, 4.4 MB NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations / Miranda, Álvaro (Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Canadell Casanova, Enric (Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona) ; Rurali, Riccardo (Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona)
The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). [...]
2012 - 10.1186/1556-276X-7-308
Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308  
6.
18 p, 3.0 MB Thermal transport in porous Si nanowires from approach-to-equilibrium molecular dynamics calculations / Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dettori, Riccardo (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Melis, Claudio (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Colombo, Luciana (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
We study thermal transport in porous Si nanowires (SiNWs) by means of approach-to-equilibrium molecular dynamics simulations. We show that the presence of pores greatly reduces the thermal conductivity, κ, of the SiNWs as long mean free path phonons are suppressed. [...]
2016 - 10.1063/1.4955038
Applied physics letters, Vol. 109, Issue 1 (Jul. 2016) , p. 131071-131074  
7.
161 p, 5.8 MB Non-linear nanoelectromechanical systems for energy harvesting / López Suárez, Miquel ; Abadal Berini, Gabriel, dir. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo, dir. (Institut de Ciència de Materials de Barcelona) ; Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica
Les Tecnologies de la Informació i la Comunicació (TICs) es troben arreu i experimenten un creixement del 5% cada any amb aplicacions en diverses àrees que comprenen des de la telefonia mòbil al control mèdic de la salut. [...]
[Barcelona] : Universitat Autònoma de Barcelona, 2014  
8.
4 p, 327.5 KB Theoretical evidence for the kick-out mechanism for B diffusion in SiC / Rurali, Riccardo (Centro Nacional de Microelectrónica) ; Godignon, Philippe (Centro Nacional de Microelectrónica) ; Rebollo Palacios, José Andrés (Centro Nacional de Microelectrónica) ; Ordejón Rontomé, Pablo (Institut de Ciència de Materials de Barcelona) ; Hernández, E. (Institut de Ciència de Materials de Barcelona) ; American Physical Society
In this letter, we analyze by means of first-principles electronic structure calculations the diffusion of B impurities in 3C-SiC. We find, through molecular dynamics, that substitutional B at a Si lattice site is readily displaced by a nearby Si interstitial by the process known as a kick-out mechanism, in agreement with recent experimental results. [...]
2002 - 10.1063/1.1515369
Applied Physics Letters, Vol. 81, Issue 16 (October 2002) , p. 2989-2991  
9.
4 p, 272.4 KB First-principles study of n-type dopants and their clustering in SiC / Rurali, Riccardo (Centro Nacional de Microelectrónica) ; Godignon, Philippe (Centro Nacional de Microelectrónica) ; Rebollo Palacios, José Andrés (Centro Nacional de Microelectrónica) ; Hernández, E. (Institut de Ciència de Materials de Barcelona) ; Ordejón Rontomé, Pablo (Institut de Ciència de Materials de Barcelona) ; American Physical Society
We report the results of an ab initio study of N and P dopants in SiC. We find that while N substitutes most favorably at a C lattice site, P does so preferably at a Si site, except in n-doping and Si-rich 3C-SiC. [...]
2003 - 10.1063/1.1583870
Applied Physics Letters, Vol. 82, Issue 24 (June 2003) , p. 4298-4300  
10.
4 p, 563.1 KB Ordered arrays of quantum wires through hole patterning : ab initio and empirical electronic structure calculations / Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an approach to the fabrication of one-dimensional nanostructures, based on the design of a pattern of channels onto a semiconductor surface. The feasibility of this approach is demonstrated by means of ab initio and empirical electronic structure calculations. [...]
2007 - 10.1063/1.2696774
Applied Physics Letters, Vol. 90, Issue 8 (February 2007) , p. 083118/1-083118/3  

Depósito Digital de Documentos de la UAB : Encontrados 23 registros   1 - 10siguientefinal  ir al registro:
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