Depósito Digital de Documentos de la UAB Encontrados 1 registros  La búsqueda tardó 0.00 segundos. 
1.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Long, Shibing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Li, Yang (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Liu, Qi (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Lv, Hangbing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  

Vea también: autores con nombres similares
1 Zhang, Meirong
1 Zhang, Mengjie
3 Zhang, Min
1 Zhang, Mingfeng
¿Le interesa recibir alertas sobre nuevos resultados de esta búsqueda?
Defina una alerta personal vía correo electrónico o subscríbase al canal RSS.