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12 p, 435.8 KB Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons / Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. [...]
2018 - 10.3390/ma11050667
Materials, Vol. 11, issue. 5 (April 2018) , art. 667  
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