Published articles

Published articles 1 records found  Search took 0.02 seconds. 
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8 p, 1.2 MB Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Cagli, Carlo (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Buckley, Julien (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pan, Feng (Tsinghua University. Laboratory of Advanced Materials) ; Liu, Ming (Chinese Academy of Sciences. Lab of Nanofabrication and Novel Device Integration) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). [...]
2013 - 10.1038/srep02929
Scientific Reports, Vol. 3, (October 2013) , art. 2929  

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