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Articles, 1 records found
Research literature, 1 records found
Articles 1 records found  
4 p, 446.5 KB Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices / Bargalló González, Mireia (Institut de Microelectrònica de Barcelona) ; Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Acero Leal, María Cruz (Institut de Microelectrònica de Barcelona) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Campabadal Segura, Francesca (Institut de Microelectrònica de Barcelona) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. [...]
2015 - 10.1016/j.mee.2015.04.046
Microelectronic engineering, Vol. 147, no. 1 (Nov. 2015) , p. 59-62  

Research literature 1 records found  
177 p, 12.1 MB Analysis and modeling of filamentary conduction in Hf0₂-based structures / Rodríguez Fernández, Alberto, autor. ; Miranda, Enrique Alberto, supervisor acadèmic. ; Bargalló González, Mireia, supervisor acadèmic. ; Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica.
Actualmente nos enfrentamos a una revolución en los campos de la microelectrónica y las tecnologías de la información y la comunicación, que seguramente afectaran nuestra forma de vida en los años venideros. [...]
We are currently facing a revolution in the fields of microelectronics and information technologies that will surely affect our way of life in the years to come. In this regard, the proposal of a memory device based on the combined action of ions and electrons is considered to be a breakthrough of our time. [...]

[Bellaterra] : Universitat Autònoma de Barcelona, 2018.
2 documents

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