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Resultados globales: 3 registros encontrados en 0.02 segundos.
Artículos, Encontrados 3 registros
Artículos Encontrados 3 registros  
1.
52 p, 1.2 MB Scaling of graphene field-effect transistors supported on hexagonal boron nitride : Radio-frequency stability as a limiting factor / Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Iglesias, José M. (Universidad de Salamanca. Departamento de Física Aplicada) ; Martin, Maria J. (Universidad de Salamanca) ; Rengel, Raul (Universidad de Salamanca) ; Li, Changfeng (Aalto University) ; Kim, Wonjae (Aalto University) ; Riikonen, Juha (Aalto University) ; Lipsanen, Harri (Aalto University) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. [...]
2017 - 10.1088/1361-6528/aa9094
Nanotechnology, Vol. 28, Núm. 48 (December 2017) , art. 485203  
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2.
12 p, 435.8 KB Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons / Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. [...]
2018 - 10.3390/ma11050667
Materials, Vol. 11, issue. 5 (April 2018) , art. 667  
Registro completo - Creative Commons
3.
5 p, 602.1 KB 3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192  
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