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17 p, 2.7 MB |
Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics
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Couso, Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Iglesias, V. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, a simulator of conductive atomic force microscopy (C-AFM) was developed to reproduce topography and current maps. In order to test the results, the authors used the simulator to investigate the influence of the C-AFM tip on topography measurements of polycrystalline high-k dielectrics, and compared the results with experimental data. [...]
2015 -  10.1116/1.4915328
Journal of Vaccuum Science and Technology B, Vol. 33 No. 3 (May-June 2015) , p031801/1-031801/6
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4 p, 1003.7 KB |
Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress
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Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Zhang, K. (Peking University. Department of Electronics) ;
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Benstetter, Guenther (University of Applied Sciences Deggendorf. Electrical Engineering Department) ;
Shen, Z. Y. (Peking University. Department of Electronics) ;
Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica))
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. [...]
2011 - 10.1063/1.3637633
Applied physics letters, Vol. 99, Issue 10 (September 2011) , p. 103510/1-103510/3
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4 p, 309.7 KB |
Soft breakdown fluctuation events in ultrathin SiO2 layers
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Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
American Physical Society
When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can occur prior to the final dielectric breakdown. After the occurrence of such failure events, the current-voltage (I-V)characteristic corresponds to the superposition of highly conductive spots and background conduction through the undegraded capacitor area. [...]
1998 - 10.1063/1.121910
Applied physics letters, Vol. 73, Issue 4 (July 1998) , p. 490-492
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4 p, 484.5 KB |
Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films
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Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ;
Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ;
Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ;
Ferrater Martorell, Cèsar (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ;
Varela Fernández, Manuel, 1956- (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ;
Fábrega Sánchez, Lourdes (Institut de Ciència de Materials de Barcelona) ;
Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ;
Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona)
Orthorhombic YMnO3epitaxialthin films were grown on Nb(0. 5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. [...]
2009 - 10.1063/1.3238287
Applied physics letters, Vol. 95, Issue 14 (October 2009) , p. 142903/1-142903/3
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4 p, 345.8 KB |
Electrical characterization of the soft breakdown failure mode in MgO layers
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Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
O'Connor, Eamon (University College Cork. Tyndall National Institute) ;
Hughes, Greg (Dublin City University. School of Physical Sciences) ;
Casey, Patrick (Dublin City University. School of Physical Sciences) ;
Cherkaoui, Karim (University College Cork. Tyndall National Institute) ;
Monaghan, S. (University College Cork. Tyndall National Institute) ;
Long, R. (University College Cork. Tyndall National Institute) ;
O'Connell, Deborah (University College Cork. Tyndall National Institute) ;
Hurley, Paul K. (University College Cork. Tyndall National Institute) ;
American Physical Society
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. [...]
2009 - 10.1063/1.3167827
Applied physics letters, Vol. 95, Issue 1 (July 2009) , p. 012901/1-012901/3
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4 p, 1.2 MB |
Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures
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Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Dudek, P. (Innovations for High Performance Microelectronics (Frankfurt, Alemanya)) ;
Schroeder, T. (Innovations for High Performance Microelectronics (Frankfurt, Alemanya)) ;
Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica)) ;
American Physical Society
The relationship between electrical and structuralcharacteristics of polycrystalline HfO2films has been investigated by conductive atomic force microscopy under ultrahigh vacuum conditions. The results demonstrate that highly conductive and breakdown (BD) sites are concentrated mainly at the grain boundaries (GBs). [...]
2010 - 10.1063/1.3533257
Applied physics letters, Vol. 97, Issue 26 (December 2010) , p. 262906/1-262906/3
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