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Resultats globals: 13 registres trobats en 0.02 segons.
Articles, 12 registres trobats
Documents de recerca, 1 registres trobats
Articles 12 registres trobats  1 - 10següent  anar al registre:
1.
12 p, 2.3 MB Multiple quantum phases in graphene with enhanced spin-orbit coupling : from the quantum spin hall regime to the spin hall effect and a robust metallic state / Cresti, Alessandro (IMEP-LAHC) ; Dinh, Van Tuan (Universitat Autònoma de Barcelona. Departament de Física) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. [...]
2014 - 10.1103/PhysRevLett.113.246603
Physical review letters, Vol. 113, issue 24 (Dec. 2014) , art. 246603  
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2.
47 p, 1.9 MB Charge transport in polycrystalline graphene : challenges and opportunities / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Duong, Dinh Loc (Sungkyunkwan University. Institute for Basic Science) ; Nguyen, Van Luan (Sungkyunkwan University. Department of Energy Science) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Helsinki. Department of Physics) ; Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Lee, Young Hee (Sungkyunkwan University. Institute for Basic Science) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. [...]
2014 - 10.1002/adma.201401389
Advanced materials, Vol. 26, issue 30 (August 2014) , p. 5079-5094  
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3.
11 p, 562.6 KB Spin transport in hydrogenated graphene / Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M. M. (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Gmitra, Martin (University of Regensburg) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Kochan, Denis (University of Regensburg) ; Ortmann, Frank (Technische Universität Dresden) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Fabian, Jaroslav (Universität Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. [...]
2015 - 10.1088/2053-1583/2/2/022002
2D Materials, Vol. 2, Núm. 2 (June 2015) , art. 22002  
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4.
17 p, 868.1 KB Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene / Cresti, Alessandro (Université Grenoble Alpes) ; Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Lenarczyk, Pawel (Institut Català de Nanociència i Nanotecnologia) ; Huhs, Georg (Barcelona Supercomputing Center) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. [...]
2013 - 10.3390/cryst3020289
Crystals, Vol. 3, Issue 2 (June 2013) , p. 289-305  
Registre complet - Creative Commons
5.
7 p, 2.3 MB Spin hall effect and origins of nonlocal Resistance in adatom-decorated graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Marmolejo Tejada, J. M. (University of Delaware. Department of Physics and Astronomy) ; Waintal, Xavier (Université Grenoble Alpes) ; Nikolić, B. K. (University of Delaware. Department of Physics and Astronomy) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. [...]
2016 - 10.1103/PhysRevLett.117.176602
Physical review letters, Vol. 117, issue 17 (Oct. 2016) , p. 176602  
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6.
12 p, 491.8 KB Anomalous ballistic transport in disordered bilayer graphene : A Dirac semimetal induced by dimer vacancies / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report anomalous quantum transport features in bilayer graphene in the presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus nondimer vacancies is investigated in very large scale disordered models. [...]
2016 - 10.1103/PhysRevB.93.041403
Physical review B, Vol. 93, Isuue 4 (January 2016) , p. 041403(R)  
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7.
8 p, 774.9 KB Spin dynamics and relaxation in graphene dictated by electron-hole puddles / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Technische Universität Dresden) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The understanding of spin dynamics and relaxation mechanisms in clean graphene, and the upper time and length scales on which spin devices can operate, are prerequisites to realizing graphene-based spintronic technologies. [...]
2016 - 10.1038/srep21046
Scientific reports, Vol. 6 (2016) , art. 21046  
Registre complet - Creative Commons
8.
12 p, 309.1 KB Spin dynamics in bilayer graphene : Role of electron-hole puddles and Dyakonov-Perel mechanism / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Adam, Shaffique (National University of Singapore. Centre for Advanced 2D Materials) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on spin transport features which are unique to high quality bilayer graphene, in the absence of magnetic contaminants and strong intervalley mixing. The time-dependent spin polarization of a propagating wave packet is computed using an efficient quantum transport method. [...]
2016 - 10.1103/PhysRevB.94.041405
Physical review B, Vol. 94, Issue 4 (July 2016) , p. 41405  
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9.
7 p, 917.0 KB Spin manipulation in graphene by chemically induced pseudospin polarization / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation, but so far new paradigms and demonstrators are limited. [...]
2016 - 10.1103/PhysRevLett.116.106601
Physical review letters, Vol. 116, Issue 10 (March 2016) , art. 106601  
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10.
15 p, 378.5 KB Pseudospin-driven spin relaxation mechanism in graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Universitat Autònoma de Barcelona. Departament de Física
The prospect of transporting spin information over long distances in graphene, possible because of its small intrinsic spin-orbit coupling (SOC) and vanishing hyperfine interaction, has stimulated intense research exploring spintronics applications. [...]
2014 - 10.1038/nphys3083
Nature Physics, Vol. 10, Núm. 11 (September 2014) , p. 857-863  
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Articles : 12 registres trobats   1 - 10següent  anar al registre:
Documents de recerca 1 registres trobats  
1.
228 p, 4.6 MB Charge and Spin Transport in Disordered Graphene-Based Materials / Dinh, Van Tuan ; Roche, Stephan, dir. ; Pascual i Gainza, Jordi, tut. ; Universitat Autònoma de Barcelona. Departament de Física
Esta tesis está enfocada en la modelización y simulación del transporte de carga y spin en materiales bidimensionales basados en Grafeno, así como en el impacto de la policristalinidad en el rendimiento de transistores de efecto campo diseñados con este tipo de materiales. [...]
This thesis is focused on modeling and simulation of charge and spin transport in two dimensional graphene-based materials as well as the impact of graphene polycrystallinity on the performance of graphene field-effect transistors. [...]
[Barcelona] : Universitat Autònoma de Barcelona, 2014  
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