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Resultados globales: 13 registros encontrados en 0.05 segundos.
Artículos, Encontrados 13 registros
Artículos Encontrados 13 registros  1 - 10siguiente  ir al registro:
1.
5 p, 939.8 KB Channel-Hot-Carrier degradation of strained MOSFETs : A device level and nanoscale combined approach / Wu, Qian (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Simoen, E. (IMEC. Belgium.)
Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. [...]
2015 - 10.1116/1.4913950
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol. 33, Issue 2 (March 2015) , p. 22202  
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2.
4 p, 1003.7 KB Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress / Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Zhang, K. (Peking University. Department of Electronics) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Benstetter, Guenther (University of Applied Sciences Deggendorf. Electrical Engineering Department) ; Shen, Z. Y. (Peking University. Department of Electronics) ; Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica))
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. [...]
2011 - 10.1063/1.3637633
Applied physics letters, Vol. 99, Issue 10 (September 2011) , p. 103510/1-103510/3  
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3.
4 p, 238.9 KB Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). [...]
2005 - 10.1063/1.1925316
Applied physics letters, Vol. 86, Issue 19 (May 2005) , p. 193502/1-193502/3  
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4.
4 p, 257.1 KB Alternating current loss in a cylinder with power-law current-voltage characteristic / Chen, Du-Xing (Institució Catalana de Recerca i Estudis Avançats) ; Gu, C. (Tsinghua University. Applied Superconductivity Research Center) ; American Physical Society
The transportac loss Q in a superconducting cylinder of radius a with a power-law current-voltage characteristicE=Ec∣J/Jc∣n as a function of current amplitude Im is numerically calculated for a set of given values of a,Jc, and frequency f at n=5, 10, 20, and 30. [...]
2005 - 10.1063/1.1947912
Applied physics letters, Vol. 86, Issue 25 (Juny 2005) , p. 252504  
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5.
4 p, 300.2 KB Post-radiation-induced soft breakdown conduction properties as a function of temperature / Cester, Andrea (Universitá di Padova. Dipartimento di Elettronica e Informatica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Paccagnella, Alessandro (Universitá di Padova. Dipartimento di Elettronica e Informatica) ; Miranda, Enrique (Universidad de Buenos Aires. Departamento de Física) ; American Physical Society
When a thin oxide is subjected to heavy ion irradiation, a large leakage current similar to the soft breakdown can be produced. In this work, we have studied the radiation soft breakdown (RSB) after 257 MeV Ag and I irradiation by using a quantum point contact (QPC) model, which also applies to hard and soft breakdown produced by electrical stresses. [...]
2001 - 10.1063/1.1398329
Applied physics letters, Vol. 79, Issue 9 (July 2001) , p. 1336-1338  
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6.
4 p, 227.5 KB Measuring electrical current during scanning probe oxidation / Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín Olmos, Cristina (Institut de Microelectrònica de Barcelona) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Kuramochi, H. (Nanotechnology Research Institute (Ibaraki, Japó)) ; Yokoyama, H. (Nanotechnology Research Institute (Ibaraki, Japó)) ; Dagata, J. A. (National Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica)) ; American Physical Society
Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip-surface distance is known unequivocally during current acquisition. [...]
2003 - 10.1063/1.1572480
Applied physics letters, Vol. 82, Issue 18 (April 2003) , p. 3086-3088  
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7.
4 p, 695.9 KB Bidirectional resonant tunneling spin pump / Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose a mechanism for achieving bidirectional spin pumping in conventional nonmagnetic semiconductorresonant tunnelingheterostructures under zero magnetic field. The device is designed specifically to take advantage of the special spin configuration described by the Rashba effect in asymmetric quantum wells. [...]
2003 - 10.1063/1.1602158
Applied physics letters, Vol. 83, Issue 7 (August 2003) , p. 1391-1393  
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8.
4 p, 611.3 KB Current-induced cleaning of graphene / Moser, Joel (Centre d'Investigació en Nanociència i Nanotecnologia) ; Barreiro Megino, Amelia (Centre d'Investigació en Nanociència i Nanotecnologia) ; Bachtold, Adrian (Centre d'Investigació en Nanociència i Nanotecnologia) ; American Physical Society
A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. [...]
2007 - 10.1063/1.2789673
Applied physics letters, Vol. 91, Issue 16 (October 2007) , p. 163513/1-163513/3  
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9.
4 p, 546.0 KB Self-consistent coupling between driven electron tunneling and electromagnetic propagation at terahertz frequencies / Oriols, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Boano, F. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Alarcón Pardo, Alfonso (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
An accurate procedure for coupling (time-dependent) driven electron tunneling and electromagnetic propagation at terahertz frequencies cannot be developed neither with equivalent electric-circuit approximations nor using standard electromagnetic solvers. [...]
2008 - 10.1063/1.2937307
Applied physics letters, Vol. 92, Issue 22 (June 2008) , p. 222107/1-222107/3  
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10.
4 p, 315.4 KB Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Falbo, P. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Crupi, F. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica) ; American Physical Society
A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. [...]
2008 - 10.1063/1.2949748
Applied physics letters, Vol. 92, Issue 25 (June 2008) , p. 253505/1-253505/3  
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Artículos : Encontrados 13 registros   1 - 10siguiente  ir al registro:
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