Resultados globales: 4 registros encontrados en 0.03 segundos.
Artículos, Encontrados 4 registros
Artículos Encontrados 4 registros  
1.
22 p, 4.1 MB Status and prospects of cubic silicon carbide power electronics device technology / Li, Fan (Newport Wafer Fab) ; Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Evans, Jonathan Edward (Swansea University. Faculty of Science) ; Fisher, Craig Arthur (Swansea University. Faculty of Science) ; Monaghan, Finn Alec (Swansea University. Faculty of Science) ; Mawby, Philip Andrew (The University of Warwick. School of Engineering) ; Jennings, Mike (Swansea University. Faculty of Science)
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. [...]
2021 - 10.3390/ma14195831
Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831  
2.
6 p, 657.0 KB Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating / Russell, Stephen (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ; Fisher, Craig (University of Warwick. School of Engineering) ; Hamilton, Dean P. (University of Warwick. School of Engineering) ; Mawby, Philip A. (University of Warwick. School of Engineering) ; Jennings, Mike (University of Warwick. School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261  
3.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
4.
5 p, 602.1 KB 3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192  

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