Resultats globals: 3 registres trobats en 0.02 segons.
Articles, 3 registres trobats
Articles 3 registres trobats  
1.
13 p, 2.2 MB Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides / Roldán, Rafael (Instituto de Ciencia de Materiales de Madrid) ; López Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Cappelluti, Emmanuele (Istituto de Sistemi Complessi) ; Silva Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia)
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMDs) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. [...]
2014 - 10.1088/2053-1583/1/3/034003
2D Materials, Vol. 1, Núm. 3 (December 2014) , art. 34003  
2.
11 p, 3.4 MB Electronic structure of 2H-NbSe₂ single-layers in the CDW state / Silva Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona)
Adensity functional theory study of NbSe₂"Qsingle-layers in the normal non-modulated and the 3xQ3 CDW states is reported. Weshow that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. [...]
2016 - 10.1088/2053-1583/3/3/035028
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35028  
3.
214 p, 55.9 MB Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems / Ferrari, Andrea C. (University of Cambridge) ; Bonaccorso, Francesco (Istituto Italiano di Tecnologia) ; Fal'ko, Vladimir (Lancaster University. Department of Physics) ; Novoselov, Konstantin S. (University of Manchester) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bøggild, Peter (Technical University of Denmark) ; Borini, Stefano (Nokia Technologies) ; Koppens, Frank H.L. (Institut de Ciències Fotòniques) ; Palermo, Vincenzo (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pugno, Nicola (Queen Mary University of London) ; Garrido Ariza, José A. (Technische Universität München) ; Sordan, Roman (Politecnico di Milano) ; Bianco, Alberto (Institut de Biologie Moleculaire et Cellulaire) ; Ballerini, Laura (Università di Trieste) ; Prato, Maurizio (Università di Trieste. Dipartimento di Scienze Farmaceutiche) ; Lidorikis, Elefterios (University of Ioannina. Department of Materials Science and Engineering) ; Kivioja, Jani (Nokia Technologies) ; Marinelli, Claudio (Wilton Centre) ; Ryhänen, Tapani (Nokia Technologies) ; Morpurgo, Alberto (Université de Genève. Département de Physique de la Matière Condensée) ; Coleman, Jonathan N. (Trinity College) ; Nicolosi, Valeria (Trinity College) ; Colombo, Luigi (Texas Instruments Incorporated) ; Fert, Albert (Université de Paris-Sud) ; García Hernández, Mar (Instituto de Ciencia de Materiales de Madrid) ; Bachtold, Adrian (Institut de Ciències Fotòniques) ; Schneider, Gregory F. (Leiden University) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Dekker, Cees (Delft University of Technology) ; Barbone, Matteo (University of Cambridge) ; Sun, Zhipei (University of Cambridge) ; Galiotis, Costas (University of Patras. Department of Chemical Engineering) ; Grigorenko, Alexander N. (University of Manchester) ; Konstantatos, Gerasimos (Institut de Ciències Fotòniques) ; Kis, Andras (Ecole Polytechique Fédérale de Lausanne) ; Katsnelson, Mikhail (Radboud University Nijmegen) ; Vandersypen, Lieven (Delft University of Technology) ; Loiseau, Annick (Laboratoire d'Etude des Microstructures) ; Morandi, Vittorio (CNR-Istituto per la Microelettronica e i Microsistemi) ; Neumaier, Daniel (Advanced Microelectronic Centre Aachen) ; Treossi, Emanuele (CNR-Istituto per la Sintesi Organica e la Fotoreattività) ; Pellegrini, Vittorio (Scuola Normale Superiore) ; Polini, Marco (Scuola Normale Superiore) ; Tredicucci, Alessandro (Scuola Normale Superiore) ; Williams, Gareth M. (Airbus UK Ltd) ; Hee Hong, Byung (Seoul National University. Department of Chemistry) ; Ahn, Jong Hyun (Yonsei University) ; Kim, Jong Min (University of Oxford. Department of Engineering Science) ; Zirath, Herbert (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Van Wees, Bart J. (University of Groningen) ; Van Der Zant, Herre S.J. (Delft University of Technology) ; Occhipinti, Luigi (STMicroelectronics) ; Di Matteo, Andrea (STMicroelectronics) ; Kinloch, Ian A. (University of Manchester) ; Seyller, Thomas (Technische Universität Chemnitz) ; Quesnel, Etienne (Institut LITEN) ; Feng, Xinliang (Max-Planck-Institut für Polymerforschung) ; Teo, Ken (Aixtron Ltd.) ; Rupesinghe, Nalin (Aixtron Ltd.) ; Hakonen, Pertti (Aalto University) ; Neil, Simon R.T. (CambridgeIP) ; Tannock, Quentin (CambridgeIP) ; Löfwander, Tomas (Chalmers University of Technology. Department of Microtechnology and Nanoscience) ; Kinaret, Jari (Chalmers University of Technology. Department of Applied Physics)
We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. [...]
2015 - 10.1039/c4nr01600a
Nanoscale, Vol. 7, Issue 11 (March 2015) , p. 4598-4810  

Vegeu també: autors amb noms similars
3 Guinea, F.
Us interessa rebre alertes sobre nous resultats d'aquesta cerca?
Definiu una alerta personal via correu electrònic o subscribiu-vos al canal RSS.