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Resultats globals: 6 registres trobats en 0.02 segons.
Articles, 6 registres trobats
Articles 6 registres trobats  
1.
6 p, 1.6 MB A study on free-standing 3C-SiC bipolar power diodes / Li, Fan (University of Warwick. School of Engineering) ; Renz, Arne Benjamin (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick. School of Engineering) ; Gammon, Peter (University of Warwick. School of Engineering) ; La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ; Jennings, Mike (Swansea University. College of Engineering) ; Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 - 10.1063/5.0054433
Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101  
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2.
22 p, 4.1 MB Status and prospects of cubic silicon carbide power electronics device technology / Li, Fan (Newport Wafer Fab) ; Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Evans, Jonathan Edward (Swansea University. Faculty of Science) ; Fisher, Craig Arthur (Swansea University. Faculty of Science) ; Monaghan, Finn Alec (Swansea University. Faculty of Science) ; Mawby, Philip Andrew (The University of Warwick. School of Engineering) ; Jennings, Mike (Swansea University. Faculty of Science)
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. [...]
2021 - 10.3390/ma14195831
Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831  
Registre complet - Creative Commons
3.
26 p, 7.9 MB GaO and related ultra-wide bandgap power semiconductor oxides : new energy electronics solutions for CO emission mitigation / Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Asher, Jacob J. (Swansea University. College of Engineering) ; Jennings, Mike (Swansea University. College of Engineering) ; Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Currently, a significant portion (~50%) of global warming emissions, such as CO, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. [...]
2022 - 10.3390/ma15031164
Materials, Vol. 15, issue 3 (Feb. 2022) , art. 1164  
Registre complet - Creative Commons
4.
43 p, 1.9 MB P-type ultrawide-band-gap spinel ZnGa2O4 : new perspectives for energy electronics / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sartel, Corinne. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Vilar, Christele (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia) ; Belarre Triviño, Francisco Javier (Institut Català de Nanociència i Nanotecnologia) ; Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Li, Lijie (Swansea University. College of Engineering) ; Jennings, Mike (Swansea University. College of Engineering) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
The family of spinel compounds is a large and important class of multifunctional materials of general formulation ABX with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. [...]
2020 - 10.1021/acs.cgd.9b01669
Crystal Growth and Design, Vol. 20 Núm. 4 (April 2020) , p. 2535-2546  
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5.
6 p, 657.0 KB Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating / Russell, Stephen (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ; Fisher, Craig (University of Warwick. School of Engineering) ; Hamilton, Dean P. (University of Warwick. School of Engineering) ; Mawby, Philip A. (University of Warwick. School of Engineering) ; Jennings, Mike (University of Warwick. School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261  
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6.
5 p, 602.1 KB 3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192  
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Vegeu també: autors amb noms similars
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2 Jennings, Mariela V
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