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Articles, 3 records found
Articles 3 records found  
1.
47 p, 1.9 MB Charge transport in polycrystalline graphene : challenges and opportunities / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Duong, Dinh Loc (Sungkyunkwan University. Institute for Basic Science) ; Nguyen, Van Luan (Sungkyunkwan University. Department of Energy Science) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Helsinki. Department of Physics) ; Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Lee, Young Hee (Sungkyunkwan University. Institute for Basic Science) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale, which is required for industrial applications. [...]
2014 - 10.1002/adma.201401389
Advanced materials, Vol. 26, issue 30 (August 2014) , p. 5079-5094  
Detailed record -
2.
6 p, 3.1 MB Scaling properties of charge transport in polycrystalline graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (Universität Wien. Faculty of Physics) ; Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Meyer, Jannik C. (Universität Wien. Faculty of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Polycrystalline graphene is a patchwork of coalescing graphene grains of varying lattice orientations and size, resulting from the chemical vapor deposition (CVD) growth at random nucleation sites on metallic substrates. [...]
2013 - 10.1021/nl400321r
Nano letters, Vol. 13, issue 4 (April 2013) , p. 1730-1735  
Detailed record - Creative Commons
3.
5 p, 1.7 MB Impact of graphene polycrystallinity on the performance of graphene field-effect transistors / Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Vienna. Faculty of Physics) ; Roche, Stephan (Institució Catalana de Recerca i Estudis Avançats) ; American Institute of Physics
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. [...]
2014 - 10.1063/1.4863842
Applied physics letters, Vol. 104, Issue 4 (January 2014) , p. 043509/1-043509/4  
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