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14 p, 5.6 MB Resonant MEMS pressure sensor in 180 nm CMOS technology obtained by BEOL isotropic etching / Mata-Hernandez, Diana (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ; Fernández Martínez, Daniel (Institut de Física d'Altes Energies) ; Banerji, Saoni (University of Tartu. Institute of Technology. Intelligent Materials and Systems Laboratory) ; Madrenas, Jordi (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica)
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. [...]
2020 - 10.3390/s20216037
Sensors (Basel, Switzerland), Vol. 20, issue 21 (Nov. 2020) , art. 6037  
Detailed record - Creative Commons

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