Results overview: Found 27 records in 0.02 seconds.
Articles, 25 records found
Research literature, 2 records found
Articles 25 records found  1 - 10nextend  jump to record:
1.
Assessment of large critical electric field in ultra-wide bandgap p-type spinel ZnGa2O4 / Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Gamsakhurdashvili, Tsotne (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Yamano, Hayate (Danube University Krems. Department for Integrated Sensor Systems) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Medjdoub, Farid (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie) ; Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
The spinel zinc gallate ZnGaO stands out among the emerging ultra-wide bandgap (∼5 eV) semiconductors as the ternary complex oxide with the widest gap where bipolar conductivity has been demonstrated. [...]
2023 - 10.1088/1361-6463/acbb14
Journal of Physics D: Applied Physics, Vol. 56, núm. 10 (March 2023) , art. 105102  
2.
29 p, 1.9 MB A walk on the frontier of energy electronics with power ultra-wide bandgap oxides and ultra-thin neuromorphic 2D materials / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint-Quentin-en-Yvelines) ; Rogers, David J. (Nanovation)
Ultra-wide bandgap (UWBG) semiconductors and ultra-thin two-dimensional materials (2D) are at the very frontier of the electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and deeper ultraviolet optoelectronics. [...]
2021 - 10.1117/12.2590747
Proceedings of SPIE, Vol. 11687 (2021) , p. 2590747  
3.
6 p, 1.6 MB A study on free-standing 3C-SiC bipolar power diodes / Li, Fan (University of Warwick. School of Engineering) ; Renz, Arne Benjamin (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick. School of Engineering) ; Gammon, Peter (University of Warwick. School of Engineering) ; La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ; Jennings, Mike (Swansea University. College of Engineering) ; Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 - 10.1063/5.0054433
Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101  
4.
18 p, 1.4 MB Carbon incorporation in MOCVD of MoS2 thin films grown from an organosulfide precursor / Schaefer, Christian M. (Institut Català de Nanociència i Nanotecnologia) ; Caicedo Roque, Jose Manuel (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Bousquet, Jessica (Institut Català de Nanociència i Nanotecnologia) ; Hébert, Clément (Institut Català de Nanociència i Nanotecnologia) ; Sperling, Justin R. (Institut Català de Nanociència i Nanotecnologia) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
With the rise of two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors and their prospective use in commercial (opto)electronic applications, it has become key to develop scalable and reliable TMD synthesis methods with well-monitored and controlled levels of impurities. [...]
2021 - 10.1021/acs.chemmater.1c00646
Chemistry of materials, Vol. 33, Issue 12 (June 2021) , p. 4474-4487  
5.
22 p, 4.1 MB Status and prospects of cubic silicon carbide power electronics device technology / Li, Fan (Newport Wafer Fab) ; Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Evans, Jonathan Edward (Swansea University. Faculty of Science) ; Fisher, Craig Arthur (Swansea University. Faculty of Science) ; Monaghan, Finn Alec (Swansea University. Faculty of Science) ; Mawby, Philip Andrew (The University of Warwick. School of Engineering) ; Jennings, Mike (Swansea University. Faculty of Science)
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. [...]
2021 - 10.3390/ma14195831
Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831  
6.
26 p, 7.9 MB GaO and related ultra-wide bandgap power semiconductor oxides : new energy electronics solutions for CO emission mitigation / Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Asher, Jacob J. (Swansea University. College of Engineering) ; Jennings, Mike (Swansea University. College of Engineering) ; Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Currently, a significant portion (~50%) of global warming emissions, such as CO, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. [...]
2022 - 10.3390/ma15031164
Materials, Vol. 15, issue 3 (Feb. 2022) , art. 1164  
7.
30 p, 3.1 MB Origin of large negative electrocaloric effect in antiferroelectric PbZr O3 / Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Faye, Romain (Luxembourg Institute of Science and Technology. Materials Research and Technology Department) ; Vellvehi, Miquel (Institut de Microelectrònica de Barcelona) ; Nouchokgwe, Youri (University of Luxembourg) ; Perpiñà Giribet, Xavier (Institut de Microelectrònica de Barcelona) ; Caicedo Roque, Jose Manuel (Institut Català de Nanociència i Nanotecnologia) ; Jordà, Xavier (Institut de Microelectrònica de Barcelona) ; Roleder, Krystian (University of Silesia in Katowice. Institute of Physics) ; Kajewski, Dariusz (University of Silesia in Katowice. Institute of Physics) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Defay, Emmanuel (Luxembourg Institute of Science and Technology. Materials Research and Technology Department) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. [...]
2021 - 10.1103/PhysRevB.103.054112
Physical review B, Vol. 103 Núm. 5 (Feb. 2021) , art. 54112  
8.
13 p, 1.5 MB Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Modreanu, Myrcea (University College Cork. Tyndall National Institute) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Rubio, Carles (Institut Català de Nanociència i Nanotecnologia) ; Arnold, Christophe (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Dumont, Yves. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
While there are several n-type transparent semiconductor oxides (TSO) for optoelectronic applications (e. g. LEDs, solar cells or display TFTs), their required p-type counterpart oxides are known to be more challenging. [...]
2019 - 10.1039/c9tc02910a
Journal of Materials Chemistry C, Vol. 7, issue 33 (Sep. 2019) , p. 10231-10239  
9.
43 p, 1.9 MB P-type ultrawide-band-gap spinel ZnGa2O4 : new perspectives for energy electronics / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sartel, Corinne. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Vilar, Christele (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia) ; Belarre Triviño, Francisco Javier (Institut Català de Nanociència i Nanotecnologia) ; Del Corro, Elena (Institut Català de Nanociència i Nanotecnologia) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Li, Lijie (Swansea University. College of Engineering) ; Jennings, Mike (Swansea University. College of Engineering) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
The family of spinel compounds is a large and important class of multifunctional materials of general formulation ABX with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. [...]
2020 - 10.1021/acs.cgd.9b01669
Crystal Growth and Design, Vol. 20 Núm. 4 (April 2020) , p. 2535-2546  
10.
19 p, 775.1 KB Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga₂O₃ / Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Kabouche, R. (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie) ; Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Rubio, Carles (Institut Català de Nanociència i Nanotecnologia) ; Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ; Medjdoub, Farid (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Dumont, Yves. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Which the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga₂O₃ is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide semiconductors such as SiC (3 MV/cm), GaN (3. [...]
2020 - 10.1016/j.mtphys.2020.100263
Materials today physics, Vol. 15 (Dec. 2020) , art. 100263  

Articles : 25 records found   1 - 10nextend  jump to record:
Research literature 2 records found  
1.
120 p, 18.0 MB Electromechanical and electrocaloric properties of antiferroelectric PbZrO3 / Vales Castro, Pablo ; Catalan, Gustau, dir. ; Perez-Tomas, Amador, dir. ; Sort Viñas, Jordi, dir.
Els antiferroelèctrics són materials no polars que, sota un camp elèctric, canvien a una fase ferroelèctrica (polar), mostrant una característic cicle d' histèresi doble de polarització-voltatge. [...]
Los antiferroeléctricos son materiales no polares que, bajo un campo eléctrico, cambian a una naturaleza ferroeléctrica (polar), mostrando así la característica histéresis doble de polarización-voltaje. [...]
Antiferroelectrics are non-polar materials which, under an electric field, switch to a ferroelectric (polar) nature, thus displaying the characteristic double-loop polarization-voltage hysteresis. They are currently being studied intensively, both from the fundamental point of view, to investigate what is the origin and behaviour of their functional response, and also from a practical point of view, as they are suitable for electrostatic energy storage and promising for applications in electromechanical transduction and electrocaloric cooling. [...]

2021  
2.
205 p, 7.9 MB Novel materials and processes for gate dielectrics on silicon carbide / Perez-Tomas, Amador ; Godignon, Philippe, dir. (Institut de Microelectrònica de Barcelona)
There is considerable evidence of the need for a semiconductor technology which exceeds the limitations imposed by silicon across a wide spectrum of industrial applications. Wide bandgap semiconductor, such as silicon carbide (SiC), gallium nitride (GaN) and diamond, offer the potential to overcome both the temperature and voltage blocking limitations of Si. [...]
Bellaterra : Universitat Autònoma de Barcelona, 2007  

See also: similar author names
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