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12 p, 2.7 MB Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction / Marigó Ferrer, Eloi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sansa Perna, Marc (Institut de Microelectrònica de Barcelona) ; Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona) ; Uranga del Monte, Aránzazu (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. [...]
2015 - 10.3390/s150717036
Sensors (Basel, Switzerland), Vol. 15 (July 2015) , p. 17036-17047  
Detailed record - Creative Commons

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