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STM-induced hydrogen desorption via a hole resonance
Stokbro, K. (Danmarks Tekniske Universitet. Mikroelektronik Centret)
Thirstrup, C. (Surface and Interface Laboratory, RIKEN (Japó))
Sakurai, M. (Surface and Interface Laboratory, RIKEN (Japó))
Quaade, U. (Danmarks Tekniske Universitet. Mikroelektronik Centret)
Yu-Kuang Hu, Ben (Danmarks Tekniske Universitet. Mikroelektronik Centret)
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Grey, F. (Danmarks Tekniske Universitet. Mikroelektronik Centret)
American Physical Society

Data: 1998
Resum: We report STM-induced desorption of H from Si(100)-H(2×1) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at −7V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5σ hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at −7V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; publishedVersion
Publicat a: Physical review letters, Vol. 80, Issue 12 (March 1998) , p. 2618-2621, ISSN 0031-9007

DOI: 10.1103/PhysRevLett.80.2618

4 p, 279.2 KB

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