Size effects on exchange bias in sub-100 nm ferromagnetic-antiferromagnetic dots deposited on prepatterned substrates
Baltz, Vincent (SPINTEC (Spin Electronics Research))
Sort Viñas, Jordi (SPINTEC (Spin Electronics Research))
Rodmacq, B. (SPINTEC (Spin Electronics Research))
Dieny, B. (SPINTEC (Spin Electronics Research))
Landis, S. (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França))
American Physical Society

Fecha:	2004
Resumen:	Exchange bias effects have been investigated in ferromagnetic (FM)-antiferromagnetic (AFM) square dots, with lateral sizes of 90 nm, sputtered on a prepatterned Si substrate. The magnetic behavior of the dots has been compared with that of a continuous FM-AFM bilayer with the same composition. Along the unidirectional direction, the dots exhibit square hysteresis loops and preserve an exchange bias field, HE, of 70 Oe at room temperature, which is about 40% smaller than HE in the continuous film. In addition, the distribution of blocking temperatures in the nanostructures is found to be shifted toward lower values with respect to that in the continuous film. These results can be interpreted assuming that the reduced lateral dimensions of the nanostructures impose some constraints on the formation and pinning of domain walls in the AFM layer.
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Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Exchange interactions ; Nanostructures ; Antiferromagnetism ; Atomic force microscopy ; Domain walls ; Ferromagnetism ; Magnetic hysteresis ; Sputter deposition ; Thin film structure
Publicado en:	Applied physics letters, Vol. 84, Issue 24 (May 2004) , p. 4923-4925, ISSN 1077-3118

DOI: 10.1063/1.1757646

4 p, 232.0 KB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Grupo de nanoingeniería de materiales, nanomagnetismo y nanomecánica (Gnm3)
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