Modeling the breakdown spots in silicon dioxide films as point contacts
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Date:	1999
Abstract:	Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. Depending on the area of the breakdown spots, the conduction properties of the breakdown paths are shown to be those of a classical Sharvin point contact or of a quantum point contact.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Point contacts ; Silicon ; Dielectric breakdown ; Dielectric thin films ; Semiconductor thin films ; Thin film structure ; Elemental semiconductors ; Experiment design ; III-V semiconductors ; Semiconductor device modeling
Published in:	Applied physics letters, Vol. 75, Issue 7 (June 1999) , p. 959-961, ISSN 1077-3118

DOI: 10.1063/1.124566

4 p, 288.8 KB

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