Discrimination between coupling and anisotropy fields in exchange-biased bilayers
Geshev, Julian (Universidade Federal do Rio Grande do Sul. Instituto de Física)
Nicolodi, S. (Universidade Federal do Rio Grande do Sul. Instituto de Física)
Silva, R. B. da (Universidade Federal do Pampa. Centro de Ciências Exatas e Tecnológicas)
Nogués, Josep (Institut Català de Nanociència i Nanotecnologia)
Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física)
Baró, M. D.. (Universitat Autònoma de Barcelona. Departament de Física)

Date:	2009
Abstract:	In the framework of models that assume planar domain wall formed at the antiferromagnetic part of the interface of exchange-biased bilayers, one cannot distinguish between the cases of high or low ratios between the coupling and the antiferromagnet's anisotropy fields by using hysteresis loop measurement, ferromagnetic resonance, anisotropic magnetoresistance, or ac susceptibility techniques applied on one and the same sample. The analysis of the experimental data obtained on a series of FeMn/Co films indicated that once the biasing is established the variation in the coercivity with the FeMn layer thickness could be essential for solving this problem. If the coercivity decreases with the thickness then the interlayer exchange coupling is the parameter that varies while the domain-wall energy of the antiferromagnet remains practically constant.
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Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Anisotropia ; Ferromagnetisme ; Histèresi ; Pel·lícules fines
Published in:	Journal of applied physics, Vol. 105, Núm. 5 (March 2009) , p. 53903-1-053903-6, ISSN 1089-7550

DOI: 10.1063/1.3079795

7 p, 551.2 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Group of Smart Nanoengineered Materials, Nanomechanics and Nanomagnetism (Gnm3)
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
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