Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology
Muñoz Gamarra, Jose Luis (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Uranga del Monte, Aránzazu (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2014
Abstract:	We report experimental demonstrations of contact-mode nano-electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (10 V) thanks to its small gap (27 nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5 mV/decade, one decade of current change is achieved with a 5 mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Published in:	Applied physics letters, Vol. 104, Issue 24 (June 2014) , p. 243105-1/243105-5, ISSN 1077-3118

DOI: 10.1063/1.4882918

6 p, 1.7 MB

The record appears in these collections:
Articles > Research articles
Articles > Published articles