Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene
Cresti, Alessandro (Université Grenoble Alpes)
Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia)
Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia)
Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia)
Lenarczyk, Pawel (Institut Català de Nanociència i Nanotecnologia)
Huhs, Georg (Barcelona Supercomputing Center)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Date: |
2013 |
Abstract: |
We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point. © 2013 by the authors; licensee MDPI, Basel, Switzerland. |
Rights: |
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Language: |
Anglès |
Document: |
Article ; recerca ; Versió publicada |
Subject: |
Graphene ;
Quantum transport ;
Vacancies |
Published in: |
Crystals, Vol. 3, Issue 2 (June 2013) , p. 289-305, ISSN 2073-4352 |
DOI: 10.3390/cryst3020289
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Record created 2019-06-03, last modified 2023-05-18