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Página principal > Artículos > Artículos publicados > Hot-Carrier Seebeck Effect : |
Fecha: | 2015 |
Resumen: | We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage V across the remaining (detector) leads. Due to the nonlocal character of the measurement, V is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and V, V ∼ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying V as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport. |
Ayudas: | European Commission 308023 Ministerio de Economía y Competitividad MAT2013-46785-P Ministerio de Economía y Competitividad SEV-2013-0295 Ministerio de Economía y Competitividad JCI-2012-12661 Ministerio de Economía y Competitividad RYC-2011-08319 |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió acceptada per publicar |
Materia: | Graphene ; Seebeck effect ; Hot carriers ; Electron-phonon interaction ; Supercollisions |
Publicado en: | Nano letters, Vol. 15, Issue 6 (June 2015) , p. 4000-4005, ISSN 1530-6992 |
Postprint 23 p, 2.0 MB |