Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
Song, Kenan (Institut Català de Nanociència i Nanotecnologia)
Soriano, David (QuantaLab and International Iberian Nanotechnology Laboratory)
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia)
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)

Fecha:	2018
Resumen:	Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. To engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is essential. However, to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known about the true nature of the spin texture of the interface states as well as their role on the measured properties. Here, we use ab initio simulations and tight-binding models to determine the precise spin texture of electronic states in graphene interfaced with a BiSe topological insulator. Our calculations predict the emergence of a giant spin lifetime anisotropy in the graphene layer, which should be a measurable hallmark of spin transport in Gr/TI heterostructures and suggest novel types of spin devices.
Ayudas:	Ministerio de Economía y Competitividad SEV-2013-0295 Ministerio de Economía y Competitividad FIS2015-67767-P Ministerio de Economía y Competitividad FIS2015-64886-C5-3-P Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-58 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-301 European Commission 676598 European Commission 696656
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Ab initio simulations ; High electron mobility ; Measured properties ; Spin orbit interactions ; Spintronics application ; Tight binding model ; Topological insulators ; Transport phenomena
Publicado en:	Nano letters, Vol. 18, Issue 3 (March 2018) , p. 2033-2039, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.7b05482

Postprint 12 p, 1.6 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
Artículos > Artículos publicados