Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN
Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry)
Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering)
Park, Minsu (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering)
Kim, Minsu (Ulsan National Institute of Science and Technology. Department of Chemistry)
Jeon, Jonghyuk (Seoul National University. Department of Chemistry)
Song, Jinouk (Korea Advanced Institute of Science and Technology. School of Electrical Engineering)
Barrios Vargas, José Eduardo (Universidad Nacional Autónoma de México. Departamento de Física y Química Teórica)
Sato, Yuta (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute)
Lin, Yung-Chang (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute)
Suenaga, Kazu (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Yoo, Seunghyup (Korea Advanced Institute of Science and Technology. School of Electrical Engineering)
Sohn, Byeong-Hyeok (Seoul National University. Department of Chemistry)
Jeon, Seokwoo (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering)
Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low Dimensional Carbon Material Center)

Fecha:	2020
Resumen:	Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.
Ayudas:	European Commission 881603 Ministerio de Economía y Competitividad SEV-2017-0706
Nota:	Altres ajuts: ICN2 is funded by the CERCA Programme/Generalitat de Catalunya.
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Graphene ; Optical properties and devices ; Two-dimensional materials
Publicado en:	Nature communications, Vol. 11 (2020) , art. 5359, ISSN 2041-1723

DOI: 10.1038/s41467-020-19181-2
PMID: 33097718

6 p, 3.4 MB

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