Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn
Galceran, Regina (Institut de Ciència de Materials de Barcelona)
Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia)
Cisneros-Fernández, Jose (Institut de Ciència de Materials de Barcelona)
Bozzo, Bernat (Institut de Ciència de Materials de Barcelona)
Frontera, Carlos (Institut de Ciència de Materials de Barcelona)
López-Mir, Laura (Institut de Ciència de Materials de Barcelona)
Deniz, Hakan (Max Planck Institute of Microstructure Physics)
Park, K.-W. (Department of Materials Science and Engineering)
Park, B.-G. (Department of Materials Science and Engineering)
Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona)
Martí, X. (Academy of Sciences of the Czech Republic)
Jungwirth, Tomas (University of Nottingham. School of Physics and Astronomy)
Martínez, B. (Institut de Ciència de Materials de Barcelona)

Date:	2016
Abstract:	Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0. 15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.
Grants:	Ministerio de Economía y Competitividad MAT-2015-71664-R Ministerio de Economía y Competitividad MAT2015-73839-JIN European Commission 268066 Ministerio de Economía y Competitividad SEV- 2015-0496 European Commission 607904 Agència de Gestió d'Ajuts Universitaris i de Recerca 2011/BP-A_2-00014
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Published in:	Scientific reports, Vol. 6 (October 2016) , art. 35471, ISSN 2045-2322

DOI: 10.1038/srep35471
PMID: 27762278

6 p, 871.6 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles